%0 Conference Paper %1 monch2020intrinsic %A Mönch, Stefan %A Reiner, Richard %A Waltereit, Patrick %A Müller, Stefan %A Quay, Rüdiger %A Ambacher, Oliver %A Kallfass, Ingmar %B 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) %C Piscataway %D 2020 %I IEEE %K ubs_10005 ubs_20007 ubs_30076 ubs_40346 unibibliografie wos %P 254-257 %R 10.1109/ISPSD46842.2020.9170089 %T A 600V p-GaN Gate HEMT with Intrinsic Freewheeling Schottky-Diode in a GaN Power IC with Bootstrapped Driver and Sensors %@ 978-1-7281-4836-6 and 978-1-7281-4837-3

@inproceedings{monch2020intrinsic, added-at = {2022-03-28T15:20:24.000+0200}, address = {Piscataway}, author = {Mönch, Stefan and Reiner, Richard and Waltereit, Patrick and Müller, Stefan and Quay, Rüdiger and Ambacher, Oliver and Kallfass, Ingmar}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2f43fcb3ec22784ec7cf5958316b62cd7/unibiblio}, booktitle = {2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)}, doi = {10.1109/ISPSD46842.2020.9170089}, eventdate = {2020-09-13/2020-09-18}, eventtitle = {2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)}, interhash = {e8393b0034aea35f3c4735105b9e67e7}, intrahash = {f43fcb3ec22784ec7cf5958316b62cd7}, isbn = {{978-1-7281-4836-6} and {978-1-7281-4837-3}}, keywords = {ubs_10005 ubs_20007 ubs_30076 ubs_40346 unibibliografie wos}, language = {eng}, pages = {254-257}, publisher = {IEEE}, timestamp = {2022-03-28T13:20:24.000+0200}, title = {A 600V p-GaN Gate HEMT with Intrinsic Freewheeling Schottky-Diode in a GaN Power IC with Bootstrapped Driver and Sensors}, venue = {Vienna, Austria}, year = 2020 }