%0 Journal Article %1 Moench_ISPSD2021 %A Moench, S. %A Reiner, R. %A Waltereit, P. %A Ambacher, O. %A Kallfass, I. %D 2021 %J in Proc. International Symposium on Power Semiconductor Devices and ICs (ISPSD) %K PUMA in update %T Capacitive Characteristics of GaN Half-Bridges for Various Si and SOI Substrate Terminations

@article{Moench_ISPSD2021, added-at = {2022-11-04T11:48:46.000+0100}, author = {Moench, S. and Reiner, R. and Waltereit, P. and Ambacher, O. and Kallfass, I.}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/24ec600649d1333d0ee206905a777aba6/ingmarkallfass}, date-added = {2020-12-05 12:08:02 +0100}, date-modified = {2021-12-21 08:41:58 +0100}, interhash = {9e5b5c6ce659e497434138d7d4b2abe3}, intrahash = {4ec600649d1333d0ee206905a777aba6}, journal = {in Proc. International Symposium on Power Semiconductor Devices and ICs (ISPSD)}, keywords = {PUMA in update}, timestamp = {2025-05-26T10:46:15.000+0200}, title = {Capacitive Characteristics of GaN Half-Bridges for Various Si and SOI Substrate Terminations}, year = 2021 }