This work investigates the impact of Sn segregation on the growth of Ge1-x Snx epi-layers using a reduced pressure chemical vapour deposition (RP-CVD) system with the common precursors Ge2H6and SnCl4. The investigated samples were grown on top of a 1 μm thick relaxed Ge buffer layer with different amounts of Sn incorporation, achieved by increasing the SnCl4partial pressure. The grown Ge1-x Snx epi-layers themselves are fully strained with respect to the Ge buffer underneath. A range of advanced analytical techniques have been used to characterize the material properties. The crystal structure, quality and thickness of the Ge1-x Snx epi-layers were analysed by using cross-sectional high resolution transmission electron microscopy, high resolution X-ray diffraction and fourier transform infrared spectrometry. Atomic force microscopy and Scanning electron microscopy in combination with energy dispersive X-ray spectroscopy are used for analysing the surface. It is shown that simply increasing the SnCl4partial pressure is insufficient for achieving Sn contents beyond ~8%. Above these concentrations the epitaxial growth breaks down due to the segregation of Sn resulting in the formation of dots on the epilayer surface, which consist of pure Sn.
%0 Conference Paper
%1 weisshaupt2017impact
%A Weißhaupt, David
%A Jahandar, Pedram
%A Colston, Gerard
%A Allred, Phil
%A Schulze, Jörg
%A Myronov, Maksym
%B 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)
%D 2017
%I IEEE
%K sent ubs_10005 ubs_20007 ubs_30069 ubs_40356 unibibliografie
%P 43-47
%R 10.23919/MIPRO.2017.7973388
%T Impact of Sn segregation on Ge1−xSnx epi-layers growth by RP-CVD
%X This work investigates the impact of Sn segregation on the growth of Ge1-x Snx epi-layers using a reduced pressure chemical vapour deposition (RP-CVD) system with the common precursors Ge2H6and SnCl4. The investigated samples were grown on top of a 1 μm thick relaxed Ge buffer layer with different amounts of Sn incorporation, achieved by increasing the SnCl4partial pressure. The grown Ge1-x Snx epi-layers themselves are fully strained with respect to the Ge buffer underneath. A range of advanced analytical techniques have been used to characterize the material properties. The crystal structure, quality and thickness of the Ge1-x Snx epi-layers were analysed by using cross-sectional high resolution transmission electron microscopy, high resolution X-ray diffraction and fourier transform infrared spectrometry. Atomic force microscopy and Scanning electron microscopy in combination with energy dispersive X-ray spectroscopy are used for analysing the surface. It is shown that simply increasing the SnCl4partial pressure is insufficient for achieving Sn contents beyond ~8%. Above these concentrations the epitaxial growth breaks down due to the segregation of Sn resulting in the formation of dots on the epilayer surface, which consist of pure Sn.
%@ 978-953-233-090-8 and 978-953-233-092-2 and 978-1-5090-4969-1
@inproceedings{weisshaupt2017impact,
abstract = {This work investigates the impact of Sn segregation on the growth of Ge1-x Snx epi-layers using a reduced pressure chemical vapour deposition (RP-CVD) system with the common precursors Ge2H6and SnCl4. The investigated samples were grown on top of a 1 μm thick relaxed Ge buffer layer with different amounts of Sn incorporation, achieved by increasing the SnCl4partial pressure. The grown Ge1-x Snx epi-layers themselves are fully strained with respect to the Ge buffer underneath. A range of advanced analytical techniques have been used to characterize the material properties. The crystal structure, quality and thickness of the Ge1-x Snx epi-layers were analysed by using cross-sectional high resolution transmission electron microscopy, high resolution X-ray diffraction and fourier transform infrared spectrometry. Atomic force microscopy and Scanning electron microscopy in combination with energy dispersive X-ray spectroscopy are used for analysing the surface. It is shown that simply increasing the SnCl4partial pressure is insufficient for achieving Sn contents beyond ~8%. Above these concentrations the epitaxial growth breaks down due to the segregation of Sn resulting in the formation of dots on the epilayer surface, which consist of pure Sn.},
added-at = {2019-12-20T13:28:58.000+0100},
author = {Weißhaupt, David and Jahandar, Pedram and Colston, Gerard and Allred, Phil and Schulze, Jörg and Myronov, Maksym},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/276ebb565e647409726170a721c3d8a0c/unibiblio},
booktitle = {2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)},
doi = {10.23919/MIPRO.2017.7973388},
eventdate = {2017-05-22/2017-05-26},
eventtitle = {40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO 2017)},
interhash = {c890c599e1da76ec2e8648e38a9b4ad3},
intrahash = {76ebb565e647409726170a721c3d8a0c},
isbn = {{978-953-233-090-8} and {978-953-233-092-2} and {978-1-5090-4969-1}},
keywords = {sent ubs_10005 ubs_20007 ubs_30069 ubs_40356 unibibliografie},
language = {eng},
pages = {43-47},
publisher = {IEEE},
timestamp = {2019-12-20T12:28:58.000+0100},
title = {Impact of Sn segregation on Ge1−xSnx epi-layers growth by RP-CVD},
venue = {Opatija, Croatia},
year = 2017
}
