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Impact of Sn segregation on Ge1−xSnx epi-layers growth by RP-CVD

, , , , , and . 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), page 43-47. IEEE, (2017)
DOI: 10.23919/MIPRO.2017.7973388

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The effect of Ge precursor on the heteroepitaxy of Ge 1− x Sn x epilayers on a Si (001) substrate, , , , , and . Semiconductor Science and Technology, 33 (3): 034003 (2018)Impact of Sn segregation on Ge1−xSnx epi-layers growth by RP-CVD, , , , , and . 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), page 43-47. IEEE, (2017)Formation of Mn5Ge3 by thermal annealing of evaporated Mn on doped Ge on Si(111), , , , , , , , and . Semiconductor science and technology, 33 (9): 095008 (2018)Electrical characterization of n-doped SiGeSn diodes with high Sn content, , , , , , , , and . Semiconductor Science and Technology, 33 (12): 124017 (2018)Formation of Mn5Ge3 by thermal annealing of evaporated Mn on doped Ge on Si(111), , , , , , , , and . Semiconductor Science and Technology, 33 (9): 95008 (2018)Electrical characterization of n-doped SiGeSn diodes with high Sn content, , , , , , , , and . Semiconductor science and technology, 33 (12): 124017 (2018)The effect of Ge precursor on the heteroepitaxy of Ge1-xSnx epilayers on a Si (001) substrate, , , , , and . Semiconductor science and technology, 33 (3): 034003 (2018)Impact of Sn segregation on Ge1-xSnx epi-layers growth by RP-CVD., , , , , and . MIPRO, page 43-47. IEEE, (2017)