%0 Conference Paper %1 weisshaupt2017impact %A Weißhaupt, David %A Jahandar, Pedram %A Colston, Gerard %A Allred, Phil %A Schulze, Jörg %A Myronov, Maksym %B 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO) %D 2017 %I IEEE %K %P 43-47 %R 10.23919/MIPRO.2017.7973388 %T Impact of Sn segregation on Ge1−xSnx epi-layers growth by RP-CVD %X This work investigates the impact of Sn segregation on the growth of Ge1-x Snx epi-layers using a reduced pressure chemical vapour deposition (RP-CVD) system with the common precursors Ge2H6and SnCl4. The investigated samples were grown on top of a 1 μm thick relaxed Ge buffer layer with different amounts of Sn incorporation, achieved by increasing the SnCl4partial pressure. The grown Ge1-x Snx epi-layers themselves are fully strained with respect to the Ge buffer underneath. A range of advanced analytical techniques have been used to characterize the material properties. The crystal structure, quality and thickness of the Ge1-x Snx epi-layers were analysed by using cross-sectional high resolution transmission electron microscopy, high resolution X-ray diffraction and fourier transform infrared spectrometry. Atomic force microscopy and Scanning electron microscopy in combination with energy dispersive X-ray spectroscopy are used for analysing the surface. It is shown that simply increasing the SnCl4partial pressure is insufficient for achieving Sn contents beyond ~8%. Above these concentrations the epitaxial growth breaks down due to the segregation of Sn resulting in the formation of dots on the epilayer surface, which consist of pure Sn. %@ 978-953-233-090-8 and 978-953-233-092-2 and 978-1-5090-4969-1

@inproceedings{weisshaupt2017impact, abstract = {This work investigates the impact of Sn segregation on the growth of Ge1-x Snx epi-layers using a reduced pressure chemical vapour deposition (RP-CVD) system with the common precursors Ge2H6and SnCl4. The investigated samples were grown on top of a 1 μm thick relaxed Ge buffer layer with different amounts of Sn incorporation, achieved by increasing the SnCl4partial pressure. The grown Ge1-x Snx epi-layers themselves are fully strained with respect to the Ge buffer underneath. A range of advanced analytical techniques have been used to characterize the material properties. The crystal structure, quality and thickness of the Ge1-x Snx epi-layers were analysed by using cross-sectional high resolution transmission electron microscopy, high resolution X-ray diffraction and fourier transform infrared spectrometry. Atomic force microscopy and Scanning electron microscopy in combination with energy dispersive X-ray spectroscopy are used for analysing the surface. It is shown that simply increasing the SnCl4partial pressure is insufficient for achieving Sn contents beyond ~8%. Above these concentrations the epitaxial growth breaks down due to the segregation of Sn resulting in the formation of dots on the epilayer surface, which consist of pure Sn.}, added-at = {2023-08-31T16:11:03.000+0200}, author = {Weißhaupt, David and Jahandar, Pedram and Colston, Gerard and Allred, Phil and Schulze, Jörg and Myronov, Maksym}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/276ebb565e647409726170a721c3d8a0c/puma-wartung}, booktitle = {2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)}, doi = {10.23919/MIPRO.2017.7973388}, eventdate = {2017-05-22/2017-05-26}, eventtitle = {40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO 2017)}, interhash = {c890c599e1da76ec2e8648e38a9b4ad3}, intrahash = {76ebb565e647409726170a721c3d8a0c}, isbn = {{978-953-233-090-8} and {978-953-233-092-2} and {978-1-5090-4969-1}}, keywords = {}, language = {eng}, pages = {43-47}, publisher = {IEEE}, timestamp = {2023-08-31T14:11:03.000+0200}, title = {Impact of Sn segregation on Ge1−xSnx epi-layers growth by RP-CVD}, venue = {Opatija, Croatia}, year = 2017 }