Spin defects in diamond are attracting interest because of their possible application in quantum information processing. One group of such defects are group 4 defects (G4V). They posses an inversion symmetry, which makes them (in first order) invariant under electric fields, allowing them to be placed inside nanophotonic structures. One of those defects is the tin-vacancy (SnV) center. It has an atom like energy structure with the zero phonon line (ZPL) at 620 nm and a Debye-Waller factor of 0.6. The lower two branches are separated by 850 GHz [1], which means that phonon induced dephasing can be neglected at 2 K.
%0 Conference Paper
%1 von_Berg_2024
%A von Berg, Oliver
%A Bushmakin, Vladislav
%A Stöhr, Rainer
%A Denisenko, Andrej
%A Wrachtrup, Jörg
%B Quantum Computing, Communication, and Simulation IV
%D 2024
%E Hemmer, Philip R.
%E Migdall, Alan L.
%I SPIE
%K pi3 wrachtrup
%R 10.1117/12.3001556
%T Integrating the tin-vacancy defect into diamond nanostructures
%U http://dx.doi.org/10.1117/12.3001556
%X Spin defects in diamond are attracting interest because of their possible application in quantum information processing. One group of such defects are group 4 defects (G4V). They posses an inversion symmetry, which makes them (in first order) invariant under electric fields, allowing them to be placed inside nanophotonic structures. One of those defects is the tin-vacancy (SnV) center. It has an atom like energy structure with the zero phonon line (ZPL) at 620 nm and a Debye-Waller factor of 0.6. The lower two branches are separated by 850 GHz [1], which means that phonon induced dephasing can be neglected at 2 K.
@inproceedings{von_Berg_2024,
abstract = {Spin defects in diamond are attracting interest because of their possible application in quantum information processing. One group of such defects are group 4 defects (G4V). They posses an inversion symmetry, which makes them (in first order) invariant under electric fields, allowing them to be placed inside nanophotonic structures. One of those defects is the tin-vacancy (SnV) center. It has an atom like energy structure with the zero phonon line (ZPL) at 620 nm and a Debye-Waller factor of 0.6. The lower two branches are separated by 850 GHz [1], which means that phonon induced dephasing can be neglected at 2 K.},
added-at = {2024-08-15T10:45:24.000+0200},
author = {von Berg, Oliver and Bushmakin, Vladislav and Stöhr, Rainer and Denisenko, Andrej and Wrachtrup, Jörg},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2c67c3144ee4b9eeceaab6731033d698d/shirschmann},
booktitle = {Quantum Computing, Communication, and Simulation IV},
doi = {10.1117/12.3001556},
editor = {Hemmer, Philip R. and Migdall, Alan L.},
interhash = {9ae5e1333c8f1ad8700c11bdd85f583f},
intrahash = {c67c3144ee4b9eeceaab6731033d698d},
keywords = {pi3 wrachtrup},
month = mar,
publisher = {SPIE},
timestamp = {2025-02-18T13:54:51.000+0100},
title = {Integrating the tin-vacancy defect into diamond nanostructures},
url = {http://dx.doi.org/10.1117/12.3001556},
year = 2024
}
