Zener tunnel-injection for Ge optical amplifiers, lasers and modulators (invited). 2017 IEEE 14th International Conference on Group IV Photonics (GFP), 11-12, August 2017. [PUMA: j.schulze.iht journal iht professional_meetings] URL
Weak localization and weak antilocalization in doped Ge1-y Sn y layers with up to 8% Sn. Journal of Physics: Condensed Matter, (33)8:085703, December 2020. [PUMA: j.schulze.iht journal journalsend:unibibliosend:unibiblio iht j.schulze.ihtsend:unibiblio] URL
Virtual Substrate Technology for Ge1-XSnX Heteroepitaxy on Si Substrates. ECS Transactions, (64)6:811--818, The Electrochemical Society, August 2014. [PUMA: j.schulze.iht journal iht] URL
Very High Room-Temperature Peak-to-Valley Current Ratio in Si Esaki Tunneling Diodes (March 2010). IEEE Transactions on Electron Devices, (57)11:2857-2863, November 2010. [PUMA: j.schulze.iht journal iht] URL
Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors. Solid-State Electronics, (110):59--64, Elsevier BV, August 2015. [PUMA: j.schulze.iht journal iht] URL
Ultra-Low Energy LIF Neuron Using Si NIPIN Diode for Spiking Neural Networks. IEEE Electron Device Letters, (39)12:1832-1835, December 2018. [PUMA: j.schulze.iht journal iht] URL
Tunnel-modulated Ge LED/laser light source and a sub-thermal voltage switching detector for the monolithic on-chip optical transceiver. 2017 IEEE International Electron Devices Meeting (IEDM), 24.4.1-24.4.4, December 2017. [PUMA: j.schulze.iht journal iht professional_meetings]
Tunnel Injection into Group IV Semiconductors and its Application to Light-Emitting Devices. 2018 IEEE Photonics Society Summer Topical Meeting Series (SUM), 29-30, July 2018. [PUMA: j.schulze.iht journal iht professional_meetings] URL
Tuning the Ge(Sn) Tunneling FET: Influence of Drain Doping, Short Channel, and Sn Content. IEEE Transactions on Electron Devices, (62)1:36-43, January 2015. [PUMA: j.schulze.iht journal iht] URL
Transient Phenomena in Sub-Bandgap Impact Ionization in Si n-i-p-i-n Diode. IEEE Transactions on Electron Devices, (65)8:3414-3420, August 2018. [PUMA: j.schulze.iht journal iht] URL
Towards electrical detection of plasmons in all-silicon pin-diodes. physica status solidi (b), (249)4:773-777, 2012. [PUMA: beam j.schulze.iht polaritons surface molecular plasmonic technology plasmon CMOS journal silicon pin-diodes iht waveguides epitaxy] URL
Titanium and Nickel as alternative materials for mid Infrared Plasmonic. 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO), 36-39, September 2021. [PUMA: j.schulze.iht journal iht professional_meetings]
The Zener-Emitter: Electron injection by direct-tunneling in Ge LEDs for the on-chip Si light source. 2016 74th Annual Device Research Conference (DRC), 1-2, June 2016. [PUMA: j.schulze.iht journal iht professional_meetings] URL
The Zener-Emitter: A novel superluminescent Ge optical waveguide-amplifier with 4.7 dB gain at 92 mA based on free-carrier modulation by direct Zener tunneling monolithically integrated on Si. 2016 IEEE International Electron Devices Meeting (IEDM), 22.5.1-22.5.4, December 2016. [PUMA: j.schulze.iht journal iht professional_meetings] URL
The effect of Ge precursor on the heteroepitaxy of Ge 1− x Sn x epilayers on a Si (001) substrate. Semiconductor Science and Technology, (33)3:034003, 2018. [PUMA: j.schulze.iht journal iht] URL
Systematic characterization of Silicon IMPATT diode for Monolithic E-band amplifier design. 2015 German Microwave Conference, 135-138, March 2015. [PUMA: j.schulze.iht journal iht professional_meetings] URL
Surface analysis of epitaxially grown GeSn alloys with Sn contents between 15% and 18%. Surface and Interface Analysis, (49):297-302, 2017. [PUMA: j.schulze.iht journal iht] URL
Sub-0.2 V Impact Ionization in Si n-i-p-i-n Diode. IEEE Transactions on Electron Devices, (63)12:4668-4673, December 2016. [PUMA: j.schulze.iht journal iht] URL
Structure and composition of Silicon–Germanium–Tin microstructures obtained through Mask Projection assisted Pulsed Laser Induced Epitaxy. Microelectronic Engineering, (125):18--21, Elsevier BV, August 2014. [PUMA: j.schulze.iht journal iht] URL
Structural and vibrational properties of SnxGe1-x: Modeling and experiments. Journal of Applied Physics, (124)3:035105--, American Institute of Physics, July 2018. [PUMA: j.schulze.iht journal iht GeSn] URL