Publications

R. Koerner, I. A. Fischer, M. Oehme, C. Clausen, and J. Schulze. Zener tunnel-injection for Ge optical amplifiers, lasers and modulators (invited). 2017 IEEE 14th International Conference on Group IV Photonics (GFP), 11-12, August 2017. [PUMA: j.schulze.iht journal iht professional_meetings] URL

David" "Weißhaupt, Hannes Simon" "Funk, Michal" "Kern, Marco M." "Dettling, Daniel" "Schwarz, Michael" Öehme, Christoph" "Sürgers, Joris" "van Slageren, Inga A." "Fischer, and Joerg" "Schulze. Weak localization and weak antilocalization in doped Ge1-y Sn y layers with up to 8% Sn. Journal of Physics: Condensed Matter, (33)8:085703, December 2020. [PUMA: j.schulze.iht journal journalsend:unibibliosend:unibiblio iht j.schulze.ihtsend:unibiblio] URL

K. Kostecki, M. Oehme, R. Koerner, D. Widmann, M. Gollhofer, S. Bechler, G. Mussler, D. Buca, E. Kasper, and J. Schulze. Virtual Substrate Technology for Ge1-XSnX Heteroepitaxy on Si Substrates. ECS Transactions, (64)6:811--818, The Electrochemical Society, August 2014. [PUMA: j.schulze.iht journal iht] URL

M. Oehme, M. Sarlija, D. Hahnel, M. Kaschel, J. Werner, E. Kasper, and J. Schulze. Very High Room-Temperature Peak-to-Valley Current Ratio in Si Esaki Tunneling Diodes (March 2010). IEEE Transactions on Electron Devices, (57)11:2857-2863, November 2010. [PUMA: j.schulze.iht journal iht] URL

Jörg Schulze, Andreas Blech, Arnab Datta, Inga A. Fischer, Daniel Hähnel, Sandra Naasz, Erlend Rolseth, and Eva-Maria Tropper. Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors. Solid-State Electronics, (110):59--64, Elsevier BV, August 2015. [PUMA: j.schulze.iht journal iht] URL

B. Das, J. Schulze, and U. Ganguly. Ultra-Low Energy LIF Neuron Using Si NIPIN Diode for Spiking Neural Networks. IEEE Electron Device Letters, (39)12:1832-1835, December 2018. [PUMA: j.schulze.iht journal iht] URL

R. Koerner, I. A. Fischer, R. Soref, D. Schwarz, C. J. Clausen, L. Hänel, M. Oehme, and J. Schulze. Tunnel-modulated Ge LED/laser light source and a sub-thermal voltage switching detector for the monolithic on-chip optical transceiver. 2017 IEEE International Electron Devices Meeting (IEDM), 24.4.1-24.4.4, December 2017. [PUMA: j.schulze.iht journal iht professional_meetings]

C. J. Clausen, I. A. Fischer, N. Hoppe, R. Koerner, M. Oehme, D. Schwarz, and J. Schulze. Tunnel Injection into Group IV Semiconductors and its Application to Light-Emitting Devices. 2018 IEEE Photonics Society Summer Topical Meeting Series (SUM), 29-30, July 2018. [PUMA: j.schulze.iht journal iht professional_meetings] URL

D. Haehnel, I. A. Fischer, A. Hornung, A. Koellner, and J. Schulze. Tuning the Ge(Sn) Tunneling FET: Influence of Drain Doping, Short Channel, and Sn Content. IEEE Transactions on Electron Devices, (62)1:36-43, January 2015. [PUMA: j.schulze.iht journal iht] URL

B. Das, J. Schulze, and U. Ganguly. Transient Phenomena in Sub-Bandgap Impact Ionization in Si n-i-p-i-n Diode. IEEE Transactions on Electron Devices, (65)8:3414-3420, August 2018. [PUMA: j.schulze.iht journal iht] URL

Inga A. Fischer, Jyh-Lih Wu, Ralf Vogelgesang, and Jörg Schulze. Towards electrical detection of plasmons in all-silicon pin-diodes. physica status solidi (b), (249)4:773-777, 2012. [PUMA: beam j.schulze.iht polaritons surface molecular plasmonic technology plasmon CMOS journal silicon pin-diodes iht waveguides epitaxy] URL

F. Berkmann, M. Ayasse, F. Mörz, I. A. Fischer, and J. Schulze. Titanium and Nickel as alternative materials for mid Infrared Plasmonic. 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO), 36-39, September 2021. [PUMA: j.schulze.iht journal iht professional_meetings]

R. Koerner, M. Oehme, K. Kostecki, I. A. Fischer, E. Rolseth, S. Bechler, M. Yorgidis, A. Blech, O. Latzl, and J. Schulze. The Zener-Emitter: Electron injection by direct-tunneling in Ge LEDs for the on-chip Si light source. 2016 74th Annual Device Research Conference (DRC), 1-2, June 2016. [PUMA: j.schulze.iht journal iht professional_meetings] URL

R. Koerner, D. Schwaiz, I. A. Fischer, L. Augel, S. Bechler, L. Haenel, M. Kern, M. Oehme, E. Rolseth, B. Schwartz, D. Weisshaupt, W. Zhang, and J. Schulze. The Zener-Emitter: A novel superluminescent Ge optical waveguide-amplifier with 4.7 dB gain at 92 mA based on free-carrier modulation by direct Zener tunneling monolithically integrated on Si. 2016 IEEE International Electron Devices Meeting (IEDM), 22.5.1-22.5.4, December 2016. [PUMA: j.schulze.iht journal iht professional_meetings] URL

Pedram Jahandar, David Weisshaupt, Gerard Colston, Phil Allred, Jorg Schulze, and Maksym Myronov. The effect of Ge precursor on the heteroepitaxy of Ge 1− x Sn x epilayers on a Si (001) substrate. Semiconductor Science and Technology, (33)3:034003, 2018. [PUMA: j.schulze.iht journal iht] URL

W. Zhang, M. Oehme, K. Kostecki, K. Matthies, V. Stefani, E. Kasper, and J. Schulze. Systematic characterization of Silicon IMPATT diode for Monolithic E-band amplifier design. 2015 German Microwave Conference, 135-138, March 2015. [PUMA: j.schulze.iht journal iht professional_meetings] URL

L. Kormoš, M. Kratzer, K. Kostecki, M. Oehme, T. Šikola, E. Kasper, J. Schulze, and C. Teichert. Surface analysis of epitaxially grown GeSn alloys with Sn contents between 15% and 18%. Surface and Interface Analysis, (49):297-302, 2017. [PUMA: j.schulze.iht journal iht] URL

B. Das, S. Sushama, J. Schulze, and U. Ganguly. Sub-0.2 V Impact Ionization in Si n-i-p-i-n Diode. IEEE Transactions on Electron Devices, (63)12:4668-4673, December 2016. [PUMA: j.schulze.iht journal iht] URL

Stefan Stefanov, Carmen Serra, Alessandro Benedetti, Jorge Carlos Conde, Jens Werner, Michael Oehme, Jörg Schulze, Stephan Wirths, Dan Buca, and Stefano Chiussi. Structure and composition of Silicon–Germanium–Tin microstructures obtained through Mask Projection assisted Pulsed Laser Induced Epitaxy. Microelectronic Engineering, (125):18--21, Elsevier BV, August 2014. [PUMA: j.schulze.iht journal iht] URL

A. S. Vasin, F Oliveira, M. F. Cerqueira, J Schulze, and M. I. Vasilevskiy. Structural and vibrational properties of SnxGe1-x: Modeling and experiments. Journal of Applied Physics, (124)3:035105--, American Institute of Physics, July 2018. [PUMA: j.schulze.iht journal iht GeSn] URL