Current density-voltage characteristics of Si p<sup>+</sup> -i-n<sup>+</sup> Esaki tunneling diodes are presented, which are grown with low-temperature molecular beam epitaxy. The Esaki structures are realized without a postgrowth annealing step. A maximum peak-to-valley current ratio of more than 5 was obtained at room temperature. To the authors' knowledge, this result is the highest reported value for any pure Si tunnel diode. A temperature study of the current density-voltage characteristics separates all three forward current density components: 1) interband tunneling current density; 2) excess current density through defect-assisted tunneling; and 3) diffusion current density. The results show the high potential for the future development of Si Esaki tunneling diodes and predict an increase of the peak-to-valley current ratio up to 15 if the excess current density is suppressed.
%0 Journal Article
%1 5565456
%A Oehme, M.
%A Sarlija, M.
%A Hahnel, D.
%A Kaschel, M.
%A Werner, J.
%A Kasper, E.
%A Schulze, J.
%D 2010
%J IEEE Transactions on Electron Devices
%K iht j.schulze.iht journal
%N 11
%P 2857-2863
%R 10.1109/TED.2010.2068395
%T Very High Room-Temperature Peak-to-Valley Current Ratio in Si Esaki Tunneling Diodes (March 2010)
%U https://ieeexplore.ieee.org/document/5565456/
%V 57
%X Current density-voltage characteristics of Si p<sup>+</sup> -i-n<sup>+</sup> Esaki tunneling diodes are presented, which are grown with low-temperature molecular beam epitaxy. The Esaki structures are realized without a postgrowth annealing step. A maximum peak-to-valley current ratio of more than 5 was obtained at room temperature. To the authors' knowledge, this result is the highest reported value for any pure Si tunnel diode. A temperature study of the current density-voltage characteristics separates all three forward current density components: 1) interband tunneling current density; 2) excess current density through defect-assisted tunneling; and 3) diffusion current density. The results show the high potential for the future development of Si Esaki tunneling diodes and predict an increase of the peak-to-valley current ratio up to 15 if the excess current density is suppressed.
@article{5565456,
abstract = {Current density-voltage characteristics of Si p<sup>+</sup> -i-n<sup>+</sup> Esaki tunneling diodes are presented, which are grown with low-temperature molecular beam epitaxy. The Esaki structures are realized without a postgrowth annealing step. A maximum peak-to-valley current ratio of more than 5 was obtained at room temperature. To the authors' knowledge, this result is the highest reported value for any pure Si tunnel diode. A temperature study of the current density-voltage characteristics separates all three forward current density components: 1) interband tunneling current density; 2) excess current density through defect-assisted tunneling; and 3) diffusion current density. The results show the high potential for the future development of Si Esaki tunneling diodes and predict an increase of the peak-to-valley current ratio up to 15 if the excess current density is suppressed.},
added-at = {2018-11-16T14:49:56.000+0100},
author = {Oehme, M. and Sarlija, M. and Hahnel, D. and Kaschel, M. and Werner, J. and Kasper, E. and Schulze, J.},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2a262104962bf12141cef27fd7b9a1f5f/ihtpublikation},
doi = {10.1109/TED.2010.2068395},
interhash = {cbf2579fe27e020ec40328d77861aa75},
intrahash = {a262104962bf12141cef27fd7b9a1f5f},
issn = {0018-9383},
journal = {IEEE Transactions on Electron Devices},
keywords = {iht j.schulze.iht journal},
month = nov,
number = 11,
pages = {2857-2863},
timestamp = {2018-11-16T13:49:56.000+0100},
title = {Very High Room-Temperature Peak-to-Valley Current Ratio in Si Esaki Tunneling Diodes (March 2010)},
url = {https://ieeexplore.ieee.org/document/5565456/},
volume = 57,
year = 2010
}
