@ihtpublikation

Ultra-Low Energy LIF Neuron Using Si NIPIN Diode for Spiking Neural Networks

, , und . IEEE Electron Device Letters 39 (12): 1832-1835 (Dezember 2018)

Zusammenfassung

An energy efficient neuron is essential for spiking neural network (SNN) to operate at low energy to mimic the human brain functionalities in hardware. Several CMOS-based Si transistors, memory devices, spintronic devices have been used as a neuron for SNN. However, the main concern is the energy efficiency for these neurons. In this letter, we experimentally demonstrate a Si-based CMOS compatible asymmetric NIPIN diode as a LIF neuron. First, we demonstrate the LIF neuron characteristics by comparing the spike-frequency (f) versus voltage curve with that of a simple LIF neuron model. This neuron shows a classical ReLU behavior, which is attractive for typical software neuron models. Then, we show an ultra-low energy consumption of<inline-formula><tex-math notation="LaTeX">$210^-17 J$</tex-math></inline-formula>per spike at 10-nm node of this neuron, as NIPIN diode is highly scalable (<inline-formula><tex-math notation="LaTeX">$4F^2$</tex-math></inline-formula>) due to its capacitorless structure. This is the lowest reported energy/spike for any LIF neuron for SNN application. Thus, the NIPIN is suitable for ultra-low energy LIF neuron application for energy efficient SNN.

Links und Ressourcen

DOI:
10.1109/LED.2018.2876684
URL:
BibTeX-Schlüssel:
das2018ultralow
Suchen auf:

Kommentare und Rezensionen  
(0)

Es gibt bisher keine Rezension oder Kommentar. Sie können eine schreiben!

Tags


Zitieren Sie diese Publikation