We present the Ge Zener-Emitter injection mechanism for synthesis of an indirect semiconductor optical amplifier (ISOA), featuring gain characteristics and electro-absorption modulation with extinction ratios > 14 dB by sufficient Moss-Burstein shift, for generic Ge-on-Si Photonics platform.
%0 Conference Paper
%1 8082171
%A Koerner, R.
%A Fischer, I. A.
%A Oehme, M.
%A Clausen, C.
%A Schulze, J.
%B 2017 IEEE 14th International Conference on Group IV Photonics (GFP)
%D 2017
%K iht j.schulze.iht journal professional_meetings
%P 11-12
%R 10.1109/GROUP4.2017.8082171
%T Zener tunnel-injection for Ge optical amplifiers, lasers and modulators (invited)
%U https://ieeexplore.ieee.org/document/8082171/
%X We present the Ge Zener-Emitter injection mechanism for synthesis of an indirect semiconductor optical amplifier (ISOA), featuring gain characteristics and electro-absorption modulation with extinction ratios > 14 dB by sufficient Moss-Burstein shift, for generic Ge-on-Si Photonics platform.
@inproceedings{8082171,
abstract = {We present the Ge Zener-Emitter injection mechanism for synthesis of an indirect semiconductor optical amplifier (ISOA), featuring gain characteristics and electro-absorption modulation with extinction ratios > 14 dB by sufficient Moss-Burstein shift, for generic Ge-on-Si Photonics platform.},
added-at = {2018-12-05T12:43:07.000+0100},
author = {Koerner, R. and Fischer, I. A. and Oehme, M. and Clausen, C. and Schulze, J.},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/244e1e8ce83a2a014e2bd53ee993e8055/ihtpublikation},
booktitle = {2017 IEEE 14th International Conference on Group IV Photonics (GFP)},
doi = {10.1109/GROUP4.2017.8082171},
interhash = {38bc85a1a3f1c98a6027194a9a804ea2},
intrahash = {44e1e8ce83a2a014e2bd53ee993e8055},
issn = {1949-209X},
keywords = {iht j.schulze.iht journal professional_meetings},
month = aug,
pages = {11-12},
timestamp = {2018-12-05T11:43:07.000+0100},
title = {Zener tunnel-injection for Ge optical amplifiers, lasers and modulators (invited)},
url = {https://ieeexplore.ieee.org/document/8082171/},
year = 2017
}