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Zener tunnel-injection for Ge optical amplifiers, lasers and modulators (invited)

, , , , and . 2017 IEEE 14th International Conference on Group IV Photonics (GFP), page 11-12. (August 2017)
DOI: 10.1109/GROUP4.2017.8082171

Abstract

We present the Ge Zener-Emitter injection mechanism for synthesis of an indirect semiconductor optical amplifier (ISOA), featuring gain characteristics and electro-absorption modulation with extinction ratios > 14 dB by sufficient Moss-Burstein shift, for generic Ge-on-Si Photonics platform.

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