Inproceedings,

Zener tunnel-injection for Ge optical amplifiers, lasers and modulators (invited)

, , , , and .
2017 IEEE 14th International Conference on Group IV Photonics (GFP), page 11-12. IEEE, (2017)
DOI: 10.1109/GROUP4.2017.8082171

Abstract

We present the Ge Zener-Emitter injection mechanism for synthesis of an indirect semiconductor optical amplifier (ISOA), featuring gain characteristics and electro-absorption modulation with extinction ratios > 14 dB by sufficient Moss-Burstein shift, for generic Ge-on-Si Photonics platform.

Tags

Users

  • @unibiblio
  • @markusayasse
  • @ihtpublikation

Comments and Reviews