Author of the publication

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

No persons found for author name Bersuker, Gennadi
add a person with the name Bersuker, Gennadi
 

Other publications of authors with the same name

Probing stress effects in HfO2 gate stacks with time dependent measurements., , , , , , , , , and . Microelectronics Reliability, 45 (5-6): 806-810 (2005)Microscopic degradation models for advanced technology.. VLSI-DAT, page 1. IEEE, (2013)Random Telegraph Signal noise properties of HfOx RRAM in high resistive state., , , , and . ESSDERC, page 274-277. IEEE, (2012)Assessing device reliability through atomic-level modeling of material characteristics.. ICICDT, page 1-3. IEEE, (2014)Intrinsic bonding defects in transition metal elemental oxides., , , , , , and . Microelectronics Reliability, 46 (9-11): 1623-1628 (2006)Applications of DCIV method to NBTI characterization., , and . Microelectronics Reliability, 47 (9-11): 1366-1372 (2007)Electrical characterization and analysis techniques for the high-kappa era., , , , , and . Microelectronics Reliability, 47 (4-5): 479-488 (2007)Temperature dependent time-to-breakdown (TBD) of TiN/HfO2 n-channel MOS devices in inversion., , , , , and . Microelectronics Reliability, 49 (5): 495-498 (2009)Threading dislocations in III-V semiconductors: Analysis of electrical conduction., , , , , , , , , and . IRPS, page 4. IEEE, (2015)Effect of Pre-Existing Defects on Reliability Assessment of High-K Gate Dielectrics., , , , , , , and . Microelectronics Reliability, 44 (9-11): 1509-1512 (2004)