%0 Journal Article %1 journals/mr/ChowdhuryWBYRM09 %A Chowdhury, N. A. %A Wang, X. %A Bersuker, Gennadi %A Young, Chadwin D. %A Rahim, N. %A Misra, Durga %D 2009 %J Microelectronics Reliability %K dblp %N 5 %P 495-498 %T Temperature dependent time-to-breakdown (TBD) of TiN/HfO2 n-channel MOS devices in inversion. %U http://dblp.uni-trier.de/db/journals/mr/mr49.html#ChowdhuryWBYRM09 %V 49

@article{journals/mr/ChowdhuryWBYRM09, added-at = {2019-05-29T00:00:00.000+0200}, author = {Chowdhury, N. A. and Wang, X. and Bersuker, Gennadi and Young, Chadwin D. and Rahim, N. and Misra, Durga}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2855815bd0d66d21f7fec3f2210172081/dblp}, ee = {https://doi.org/10.1016/j.microrel.2009.02.003}, interhash = {6b2014c59ff9e52eb9212f701f66645a}, intrahash = {855815bd0d66d21f7fec3f2210172081}, journal = {Microelectronics Reliability}, keywords = {dblp}, number = 5, pages = {495-498}, timestamp = {2019-09-27T10:58:27.000+0200}, title = {Temperature dependent time-to-breakdown (TBD) of TiN/HfO2 n-channel MOS devices in inversion.}, url = {http://dblp.uni-trier.de/db/journals/mr/mr49.html#ChowdhuryWBYRM09}, volume = 49, year = 2009 }