Author of the publication

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Impact of statistical variability and charge trapping on 14 nm SOI FinFET SRAM cell stability.

X. Wang, B. Cheng, A. Brown, C. Millar, J. Kuang, S. Nassif, and A. Asenov. ESSDERC, page 234-237. IEEE, (2013)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Sebastian Asenbeck University of Stuttgart

Other publications of authors with the same name

Non-Equilibrium Hole Transport in Deep Sub-Micron Well-Tempered Si p-MOSFETs.J. Watling, Y. Zhao, A. Asenov, and J. Barker. VLSI Design, 2001 (1): 169-173 (2001)RF Performance of Si/SiGe MODFETs: A Simulation Study.S. Roy, A. Asenov, S. Babiker, J. Barker, and S. Beaumont. VLSI Design, 1998 (1): 325-330 (1998)A New Approach based on Brownian Motion for the Simulation of Ultra-Small Semiconductor Devices.C. Arokianathan, A. Asenov, and J. Davies. VLSI Design, 1998 (1): 243-246 (1998)Topologically Rectangular Grids in the Parallel Simulation of Semiconductor Devices.A. Asenov, A. Brown, S. Roy, and J. Barker. VLSI Design, 1998 (1): 91-95 (1998)Ab-initio Coulomb Scattering in Atomistic Device Simulation.C. Arokianathan, J. Davies, and A. Asenov. VLSI Design, 1998 (1): 331-335 (1998)ICMAT 2011 - Reliability and variability of semiconductor devices and ICs.A. Asenov, U. Schlichtmann, C. Tan, H. Wong, and X. Zhou. Microelectronics Reliability, 52 (8): 1531 (2012)Special section reliability and variability of devices for circuits and systems.A. Asenov, U. Schlichtmann, C. Tan, H. Wong, and X. Zhou. Microelectronics Reliability, 54 (6-7): 1057 (2014)Accurate simulations of the interplay between process and statistical variability for nanoscale FinFET-based SRAM cell stability.X. Wang, B. Cheng, A. Brown, C. Millar, and A. Asenov. ESSDERC, page 349-352. IEEE, (2014)Statistical simulation of random dopant induced threshold voltage fluctuations for 35 nm channel length MOSFET.U. Kovac, D. Reid, C. Millar, G. Roy, S. Roy, and A. Asenov. Microelectronics Reliability, 48 (8-9): 1572-1575 (2008)Statistical NBTI-effect prediction for ULSI circuits.T. Tang, A. Murray, B. Cheng, and A. Asenov. ISCAS, page 2494-2497. IEEE, (2010)

PUMA

Disambiguation of "Asenov, Asen"

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Impact of statistical variability and charge trapping on 14 nm SOI FinFET SRAM cell stability.

Please choose a person to relate this publication to

Sebastian Asenbeck University of Stuttgart

Other publications of authors with the same name

Disambiguation

PUMA

Disambiguation of "Asenov, Asen"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Impact of statistical variability and charge trapping on 14 nm SOI FinFET SRAM cell stability.

Please choose a person to relate this publication to

Sebastian Asenbeck University of Stuttgart

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Impact of statistical variability and charge trapping on 14 nm SOI FinFET SRAM cell stability.