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Device Design Issues for a High-Performance Bipolar Technology with Si Or SiGe Epitaxial Base

J. Burghartz, J. Cressler, K. Jenkins, J. Sun, J. Stork, J. Comfort, T. Brunner, and C. Stanis. Proceedings of the 21st European Solid State Device Research Conference, - ESSDERC ’91, 16 - 19 September 1991, Montreux, Switzerland, page 11-14. Amsterdam, Elsevier, (1991)

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John Nixon University of Stuttgart

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A high performance epitaxial SiGe-base ECL BiCMOS technologyD. Harame, E. Crabbé, J. Cressler, J. Comfort, J. Sun, S. Stiffler, E. Kobeda, J. Burghartz, M. Gilbert, J. Malinowski and 7 other author(s). Technical digest : International Electron Devices Meeting 1992 : San Francisco, CA, December 13 - 16, 1992, page 19-22. Piscataway, New Jersey, IEEE, (1992)A Scaled 0.25-Μm Bipolar Technology Using Full E-Beam LithographyJ. Cressler, J. Warnock, P. Coane, K. Chiong, M. Rothwell, K. Jenkins, J. Burghartz, E. Petrillo, N. Mazzeo, A. Megdanis and 4 other author(s). IEEE Electron Device Letters, 13 (5): 262-264 (1992)A High-Speed Complementary Silicon Bipolar Technology With 12-FJ Power-Delay ProductJ. Cressler, J. Warnock, D. Harame, J. Burghartz, K. Jenkins, and C. Chuang. IEEE Electron Device Letters, 14 (11): 523-526 (November 1993)A 12-Bit Cryogenic and Radiation-Tolerant Digital-to-Analog Converter for Aerospace Extreme Environment Applications.Y. Yao, F. Dai, R. Jaeger, and J. Cressler. IEEE Trans. Industrial Electronics, 55 (7): 2810-2819 (2008)A New Self-Healing Methodology for RF Amplifier Circuits Based on Oscillation Principles.A. Goyal, M. Swaminathan, A. Chatterjee, D. Howard, and J. Cressler. IEEE Trans. VLSI Syst., 20 (10): 1835-1848 (2012)A 20 GS/sec Analog-to-Digital Sigma-Delta Modulator in SiGe HBT Technology.X. Li, W. Kuo, Y. Lu, and J. Cressler. CICC, page 221-224. IEEE, (2006)A self-testable SiGe LNA and Built-in-Self-Test methodology for multiple performance specifications of RF amplifiers.A. Goyal, M. Swaminathan, A. Chatterjee, D. Howard, and J. Cressler. ISQED, page 7-12. IEEE, (2012)Implementation of a low cost, lightweight X-band antenna with integrated SiGe RF electronics.C. Patterson, T. Thrivikraman, A. Yepes, S. Bhattacharya, J. Cressler, and J. Papapolymerou. IGARSS, page 681-684. IEEE, (2010)High-Performance Complementary Bipolar TechnologyJ. Warnock, J. Cressler, J. Burghartz, D. Harame, K. Jenkins, and C. Chuang. Digest of technical papers : 1993 Symposium on VLSI Technology : May 17 - 19, 1993, Kyoto, page 75-76. Piscataway, New Jersey, IEEE, (1993)Device Design Issues for a High-Performance Bipolar Technology with Si Or SiGe Epitaxial BaseJ. Burghartz, J. Cressler, K. Jenkins, J. Sun, J. Stork, J. Comfort, T. Brunner, and C. Stanis. Proceedings of the 21st European Solid State Device Research Conference, - ESSDERC ’91, 16 - 19 September 1991, Montreux, Switzerland, page 11-14. Amsterdam, Elsevier, (1991)