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Digital Twin for Gate-Resistor Optimisztion of Parallel, 100 V, 7 m$Ømega$, GaN HEMTs based on Comprehensive Multi-Domain Simulations and Physically-Motivated Transistor Models

D. Koch, J. Nuzzo, M. Weiser, and I. Kallfass. in Proc. IEEE Design Methodologies Conference (DMC), Miami, (September 2023)

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Mathias Weiser University of Stuttgart

M. Fittingho

M. Nudischer

M. Kratzer

M. Liewald

Other publications of authors with the same name

Extension on ASM HEMT Model with Trapping Effects in GaN Power DevicesM. Weiser, and I. Kallfass. 23rd European Conference on Power Electronics and Applications (EPE), (2021)A Comprehensive Impact-Evaluation of Gate Switching Instability on Switching Losses in SiC MOSFETsR. Schnitzler, D. Koch, T. Fink, M. Weiser, and I. Kallfass. IEEE Trans. on Electron Devices, (2025)Comparison of Gate-Source-Dependent Soft- and Hard-Switching Losses of Wide-Bandgap Semiconductor Utilizing Electrical and Rapid Heatsinkless Calorimetric MeasurementsR. Schnitzler, D. Koch, M. Weiser, J. Weimer, and I. Kallfass. in Proc. Applied Power Electronics Conference (APEC), Long Beach, (February 2024)Design Considerations of Fast On-State Voltage Measurement CircuitsM. Weiser, M. Ruess, and I. Kallfass. 23rd European Conference on Power Electronics and Applications (EPE), (2022)Unraveling the Drain-Voltage Dependency of the Dynamic On-State Resistance of GaN-HEMTsM. Weiser, U. Vogel, D. Miller, R. Schnitzler, T. Fink, and I. Kallfass. in Proc. ECCE Europe, Birmingham, (2025)Digital Twin for Gate-Resistor Optimisztion of Parallel, 100 V, 7 m$Ømega$, GaN HEMTs based on Comprehensive Multi-Domain Simulations and Physically-Motivated Transistor ModelsD. Koch, J. Nuzzo, M. Weiser, and I. Kallfass. in Proc. IEEE Design Methodologies Conference (DMC), Miami, (September 2023)A Parameter Extraction Strategy for the Determination of Parasitics in Four-Terminal Power DevicesM. Weiser, and I. Kallfass. in Proc. International Conference on Integrated Power Electronics Systems (CIPS), Duesseldorf, (2024)A Fast On-State Drain-to-Source Voltage Amplifier for the Dynamic Characterization of Fast-Switching Power TransistorsM. Weiser, and I. Kallfass. in Proc. Applied Power Electronics Conference (APEC), Orlando, (March 2023)GaN Half-Bridges on Electrical and Thermal Co-Designed Ceramic SubstratesM. Ruess, P. Mack, D. Koch, A. Reck, M. Weiser, A. Zimmermann, and I. Kallfass. Power Electronic Devices and Components (PEDC), Elsevier, (2024)An Accurate Simulation Model for Silicon Carbide Power Devices Based on BSIM3 Including Thermal Effects and Package ParasiticsM. Weiser, D. Koch, and I. Kallfass. in Proc. PCIM Europe Conference, (2025)

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Disambiguation of "Weiser, M."