Digital Twin for Gate-Resistor Optimisztion of Parallel, 100 V, 7 m$Ømega$, GaN HEMTs based on Comprehensive Multi-Domain Simulations and Physically-Motivated Transistor Models
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%0 Journal Article
%1 Koch_DMC2023
%A Koch, D.
%A Nuzzo, J.
%A Weiser, M.
%A Kallfass, I
%D 2023
%J in Proc. IEEE Design Methodologies Conference (DMC), Miami
%K PUMA in update
%T Digital Twin for Gate-Resistor Optimisztion of Parallel, 100 V, 7 m$Ømega$, GaN HEMTs based on Comprehensive Multi-Domain Simulations and Physically-Motivated Transistor Models
@article{Koch_DMC2023,
added-at = {2025-05-26T10:46:09.000+0200},
author = {Koch, D. and Nuzzo, J. and Weiser, M. and Kallfass, I},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/21fb24b128641487ce9d384808f1e75d0/ingmarkallfass},
date-added = {2023-12-08 13:21:26 +0100},
date-modified = {2023-12-08 13:27:59 +0100},
interhash = {d62fb2d5462d5f50b3fb0ffbeadb0f89},
intrahash = {1fb24b128641487ce9d384808f1e75d0},
journal = {in Proc. IEEE Design Methodologies Conference (DMC), Miami},
keywords = {PUMA in update},
month = {Sep.},
timestamp = {2025-05-26T10:46:09.000+0200},
title = {Digital Twin for Gate-Resistor Optimisztion of Parallel, 100 V, 7 m$\Omega$, GaN HEMTs based on Comprehensive Multi-Domain Simulations and Physically-Motivated Transistor Models},
year = 2023
}
