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Optimization of Fully Integrated Al Nanohole Array-Based Refractive Index Sensors for Use With a LED Light Source

, , , , , , and . IEEE Photonics Journal, 14 (3): 4831708 (2022)
DOI: 10.1109/JPHOT.2022.3177354

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Ge-on-Si PIN-photodetectors with Al nanoantennas: The effect of nanoantenna size on light scattering into waveguide modes, , , , , , , , , and . Applied Physics Letters, (2016)Approaches for III/V Photonics on Si, , , , , , , , , and . Physics of semiconductors : 30th International Conference on the Physics of Semiconductors . Seoul, Korea, 25 - 30 July 2010, 1399, page 261-262. Melville, New York, AIP, (2010)Characterization of thin Boron layers grown on Silicon utilizing molecular beam epitaxy for ultra-shallow pn-junctions., and . MIPRO, page 7-11. IEEE, (2018)Ultra-Low Energy LIF Neuron Using Si NIPIN Diode for Spiking Neural Networks, , and . IEEE electron device letters, 39 (12): 1832-1835 (2018)The Zener-Emitter : Electron injection by direct-tunneling in Ge LEDs for the on-chip Si light source, , , , , , , , , and . 2016 74th Annual Device Research Conference (DRC), page 1-2. IEEE, (2016)Virtual Substrate Technology for Ge1-XSnX Heteroepitaxy on Si Substrates, , , , , , , , , and . ECS Transactions, 64 (6): 811-818 (2014)Very High Room-Temperature Peak-to-Valley Current Ratio in Si Esaki Tunneling Diodes (March 2010), , , , , , and . IEEE Transactions on Electron Devices, 57 (11): 2857-2863 (2010)Reduction of dark current in Ge-on-Si avalanche photodiodes using a double mesa structure, , , , , , and . Metamaterials, Metadevices, and Metasystems 2024, 13109, page 1310907. International Society for Optics and Photonics, SPIE, (2024)Simulation-based optimization of Ge-PIN-photodiodes with Al nanohole arrays for refractive index sensing, , , , , and . 2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), page 0023-0026. IEEE, (2018)Silicon tunneling field-effect transistors with tunneling in line with the gate field, , , , , , , and . IEEE Electron Device Letters, 34 (2): 154-156 (2013)