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Localization and analysis of surface charges trapped in AlGaN/GaN HEMTs using multiple secondary MIS gates., , , , , , and . ESSDERC, page 22-25. IEEE, (2018)600 V, low-leakage AlGaN/GaN MIS-HEMT on bulk GaN substrates., , , , , , and . ESSDERC, page 202-205. IEEE, (2016)Comprehensive compact electro-thermal GaN HEMT model., , , , and . ESSDERC, page 196-199. IEEE, (2017)Thermal characterization and modeling of ultra-thin silicon chips., , , , , and . ESSDERC, page 397-400. IEEE, (2014)Gallium nitride high electron mobility transistors on native substrates for power switching applications : fabrication, characterization and modelling. Universität Stuttgart, Düren, Dissertation, (2019)Micro-Hybrid System in Polymer Foil Based On Adaptive Layout, , , , , , and . 2016 6th Electronic System-Integration Technology Conference (ESTC), Piscataway, New Jersey, IEEE, (2016)Manufacturing aspects of an ultra-thin chip technology, , , , , , , , , and . 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC), page 141-144. Piscataway, New Jersey, IEEE, (2012)Innovative solutions for systems based on embedding of thin components into flexible printed circuit boards, , , , , , , and . 20th European Microelectronics and Packaging Conference & Exhibition, EMPC 2015 : Enabling technologies for a better life and future, page 1-4. Piscataway, NJ, IEEE, (2015)