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%0 Conference Paper
%1 conf/essderc/AlshahedAHBWBL16
%A Alshahed, Muhammad
%A Alomari, Mohammed
%A Harendt, Christine
%A Burghartz, Joachim N.
%A Wachter, C.
%A Bergunde, T.
%A Lutgen, S.
%B ESSDERC
%D 2016
%I IEEE
%K dblp
%P 202-205
%T 600 V, low-leakage AlGaN/GaN MIS-HEMT on bulk GaN substrates.
%U http://dblp.uni-trier.de/db/conf/essderc/essderc2016.html#AlshahedAHBWBL16
%@ 978-1-5090-2969-3
@inproceedings{conf/essderc/AlshahedAHBWBL16,
added-at = {2019-05-01T00:00:00.000+0200},
author = {Alshahed, Muhammad and Alomari, Mohammed and Harendt, Christine and Burghartz, Joachim N. and Wachter, C. and Bergunde, T. and Lutgen, S.},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/290348e93162a308f18c6b39c18b2fb71/dblp},
booktitle = {ESSDERC},
crossref = {conf/essderc/2016},
ee = {https://doi.org/10.1109/ESSDERC.2016.7599621},
interhash = {d41bbd0dc53b0e7484e3ba592725d426},
intrahash = {90348e93162a308f18c6b39c18b2fb71},
isbn = {978-1-5090-2969-3},
keywords = {dblp},
pages = {202-205},
publisher = {IEEE},
timestamp = {2019-09-27T21:18:00.000+0200},
title = {600 V, low-leakage AlGaN/GaN MIS-HEMT on bulk GaN substrates.},
url = {http://dblp.uni-trier.de/db/conf/essderc/essderc2016.html#AlshahedAHBWBL16},
year = 2016
}
