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Extraction of material parameters based on inverse modeling of three-dimensional interconnect fusing structures.

, , , , , and . Microelectronics Journal, 35 (10): 805-810 (2004)

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Three-Dimensional MOS Device Simulation on a Connection Machine., , and . PPSC, page 388-393. SIAM, (1991)Modern Concepts for High-Perfomance Scientific Computing - Library Centric Application Design., , and . ICSOFT (SE), page 100-107. INSTICC Press, (2007)Shared-memory parallelization of the semi-ordered fast iterative method., , , and . SpringSim (HPS), page 217-224. SCS/ACM, (2015)Three-dimensional simulation of HPCVD-linking continuum transport and reaction kinetics with topography simulation., , , and . IEEE Trans. on CAD of Integrated Circuits and Systems, 18 (12): 1741-1749 (1999)Monte Carlo algorithms for stationary device simulations., , and . Mathematics and Computers in Simulation, 62 (3-6): 453-461 (2003)On the interplay between meshing and discretization inthree-dimensional diffusion simulation., , , , and . IEEE Trans. on CAD of Integrated Circuits and Systems, 19 (11): 1233-1240 (2000)Calculation of contact currents in device simulation., , and . IEEE Trans. on CAD of Integrated Circuits and Systems, 11 (1): 128-136 (1992)Mixed-element decomposition method for three-dimensional grid adaptation., and . IEEE Trans. on CAD of Integrated Circuits and Systems, 17 (7): 561-572 (1998)On smoothing three-dimensional Monte Carlo ion implantation simulation results., , and . IEEE Trans. on CAD of Integrated Circuits and Systems, 22 (7): 879-883 (2003)Implications of Analytical Investigations About the Semiconductor Equations on Device Modeling Programs., and . IEEE Trans. on CAD of Integrated Circuits and Systems, 3 (1): 52-64 (1984)