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IGBT gate driver IC with full-bridge output stage using a modified standard CMOS process.

A. Pérez-Tomás, X. Jordà, P. Godignon, J. Gálvez, M. Vellvehí, and J. Millán. Microelectronics Journal, 35 (8): 659-666 (2004)

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IGBT gate driver IC with full-bridge output stage using a modified standard CMOS process.A. Pérez-Tomás, X. Jordà, P. Godignon, J. Gálvez, M. Vellvehí, and J. Millán. Microelectronics Journal, 35 (8): 659-666 (2004)Long-Term Reliability of Railway Power Inverters Cooled by Heat-Pipe-Based Systems.X. Perpiñà, X. Jordà, M. Vellvehí, J. Rebollo, and M. Mermet-Guyennet. IEEE Trans. Industrial Electronics, 58 (7): 2662-2672 (2011)Analysis of Clamped Inductive Turnoff Failure in Railway Traction IGBT Power Modules Under Overload Conditions.X. Perpiñà, J. Serviere, J. Urresti-Ibañez, I. Cortés, X. Jordà, S. Hidalgo, J. Rebollo, and M. Mermet-Guyennet. IEEE Trans. Industrial Electronics, 58 (7): 2706-2714 (2011)IGBT module failure analysis in railway applications.X. Perpiñà, J. Serviere, X. Jordà, A. Fauquet, S. Hidalgo, J. Urresti-Ibañez, J. Rebollo, and M. Mermet-Guyennet. Microelectronics Reliability, 48 (8-9): 1427-1431 (2008)Output Power and Gain Monitoring in RF CMOS Class A Power Amplifiers by Thermal Imaging.X. Perpiñà, F. Reverter, J. Leon, E. Barajas, M. Vellvehí, X. Jordà, and J. Altet. IEEE Trans. Instrumentation and Measurement, 68 (8): 2861-2870 (2019)Characterization of phase change material systems using a thermal test device.X. Jordà, J. Esarte, X. Perpiñà, M. Vellvehí, G. Argandoña, and M. Aresti. Microelectronics Journal, 46 (12): 1195-1201 (2015)DC temperature measurements for power gain monitoring in RF power amplifiers.J. Altet, D. Mateo, D. Gómez, X. Perpiñà, M. Vellvehí, and X. Jordà. ITC, page 1-8. IEEE Computer Society, (2012)Electro-thermal characterization of a differential temperature sensor in a 65 nm CMOS IC: Applications to gain monitoring in RF amplifiers.J. Altet, J. González, D. Gómez, X. Perpiñà, W. Claeys, S. Grauby, C. Dufis, M. Vellvehí, D. Mateo, F. Reverter and 2 other author(s). Microelectronics Journal, 45 (5): 484-490 (2014)Solid-State Relay Solutions for Induction Cooking Applications Based on Advanced Power Semiconductor Devices.M. Fernandez, X. Perpiñà, J. Rebollo, M. Vellvehí, D. Sanchez, T. Cabeza, S. Llorente, and X. Jordà. IEEE Trans. Industrial Electronics, 66 (3): 1832-1841 (2019)SiC Schottky Diodes for Harsh Environment Space Applications.P. Godignon, X. Jordà, M. Vellvehí, X. Perpiñà, V. Banu, D. López, J. Barbero, P. Brosselard, and S. Massetti. IEEE Trans. Industrial Electronics, 58 (7): 2582-2590 (2011)

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IGBT gate driver IC with full-bridge output stage using a modified standard CMOS process.

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copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML IGBT gate driver IC with full-bridge output stage using a modified standard CMOS process.

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IGBT gate driver IC with full-bridge output stage using a modified standard CMOS process.