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IGBT gate driver IC with full-bridge output stage using a modified standard CMOS process.

A. Pérez-Tomás, X. Jordà, P. Godignon, J. Gálvez, M. Vellvehí, and J. Millán. Microelectronics Journal, 35 (8): 659-666 (2004)

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Design methodologies for reliability of SSL LED boards.J. Jakovenko, J. Formánek, X. Perpiñà, X. Jordà, M. Vellvehí, R. Werkhoven, M. Husak, J. Kunen, P. Bancken, P. Bolt and 1 other author(s). Microelectronics Reliability, 53 (8): 1076-1083 (2013)Coupled electro-thermal simulation of a DC/DC converter.M. Vellvehí, X. Jordà, P. Godignon, C. Ferrer, and J. Millán. Microelectronics Reliability, 47 (12): 2114-2121 (2007)Thermal resistance investigations on new leadframe-based LED packages and boards.B. Pardo, A. Gasse, A. Fargeix, J. Jakovenko, R. Werkhoven, X. Perpiñà, X. Jordà, M. Vellvehí, T. Weelden, and P. Bancken. Microelectronics Reliability, 53 (8): 1084-1094 (2013)Reduction of self-heating effect on SOIM devices.J. Roig, D. Flores, M. Vellvehí, J. Rebollo, and J. Millán. Microelectronics Reliability, 42 (1): 61-66 (2002)Short-Circuit Study in Medium-Voltage GaN Cascodes, p-GaN HEMTs, and GaN MISHEMTs.M. Fernandez, X. Perpiñà, J. Roig-Guitart, M. Vellvehí, F. Bauwens, M. Tack, and X. Jordà. IEEE Trans. Industrial Electronics, 64 (11): 9012-9022 (2017)Study of surface weak spots on SiC Schottky Diodes under specific operating regimes by Infrared Lock-in sensing.J. Leon, X. Perpiñà, M. Vellvehí, X. Jordà, and P. Godignon. ESSDERC, page 385-388. IEEE, (2014)Long-Term Reliability of Railway Power Inverters Cooled by Heat-Pipe-Based Systems.X. Perpiñà, X. Jordà, M. Vellvehí, J. Rebollo, and M. Mermet-Guyennet. IEEE Trans. Industrial Electronics, 58 (7): 2662-2672 (2011)Output Power and Gain Monitoring in RF CMOS Class A Power Amplifiers by Thermal Imaging.X. Perpiñà, F. Reverter, J. Leon, E. Barajas, M. Vellvehí, X. Jordà, and J. Altet. IEEE Trans. Instrumentation and Measurement, 68 (8): 2861-2870 (2019)IGBT gate driver IC with full-bridge output stage using a modified standard CMOS process.A. Pérez-Tomás, X. Jordà, P. Godignon, J. Gálvez, M. Vellvehí, and J. Millán. Microelectronics Journal, 35 (8): 659-666 (2004)DC temperature measurements for power gain monitoring in RF power amplifiers.J. Altet, D. Mateo, D. Gómez, X. Perpiñà, M. Vellvehí, and X. Jordà. ITC, page 1-8. IEEE Computer Society, (2012)

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IGBT gate driver IC with full-bridge output stage using a modified standard CMOS process.

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copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML IGBT gate driver IC with full-bridge output stage using a modified standard CMOS process.

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IGBT gate driver IC with full-bridge output stage using a modified standard CMOS process.