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IGBT gate driver IC with full-bridge output stage using a modified standard CMOS process.

A. Pérez-Tomás, X. Jordà, P. Godignon, J. Gálvez, M. Vellvehí, and J. Millán. Microelectronics Journal, 35 (8): 659-666 (2004)

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Jun. -Prof. Dr. Philippe Grönquist University of Stuttgart

Other publications of authors with the same name

Study of surface weak spots on SiC Schottky Diodes under specific operating regimes by Infrared Lock-in sensing.J. Leon, X. Perpiñà, M. Vellvehí, X. Jordà, and P. Godignon. ESSDERC, page 385-388. IEEE, (2014)IGBT gate driver IC with full-bridge output stage using a modified standard CMOS process.A. Pérez-Tomás, X. Jordà, P. Godignon, J. Gálvez, M. Vellvehí, and J. Millán. Microelectronics Journal, 35 (8): 659-666 (2004)Manufacturing and full characterization of silicon carbide-based multi-sensor micro-probes for biomedical applications.G. Gabriel, I. Erill, J. Caro, R. Gómez, D. Riera, R. Villa, and P. Godignon. Microelectronics Journal, 38 (3): 406-415 (2007)High-Voltage 4H-SiC Power MOSFETs With Boron-Doped Gate Oxide.V. Soler, M. Cabello, M. Berthou, J. Montserrat, J. Rebollo, P. Godignon, A. Mihaila, M. Rogina, A. Rodriguez, and J. Sebastián. IEEE Trans. Industrial Electronics, 64 (11): 8962-8970 (2017)Self-heating experimental study of 600V PT-IGBTs under low dissipation energies.X. Perpiñà, X. Jordà, N. Mestres, M. Vellvehí, P. Godignon, and J. Millán. Microelectronics Journal, 35 (10): 841-847 (2004)4H-SiC MESFET specially designed and fabricated for high temperature integrated circuits.M. Alexandru, V. Banu, P. Godignon, M. Vellvehí, and J. Millán. ESSDERC, page 103-106. IEEE, (2013)SiC Integrated Circuit Control Electronics for High-Temperature Operation.M. Alexandru, V. Banu, X. Jordà, J. Montserrat, M. Vellvehí, D. Tournier, J. Millán, and P. Godignon. IEEE Trans. Industrial Electronics, 62 (5): 3182-3191 (2015)Enhanced power cycling capability of SiC Schottky diodes using press pack contacts.V. Banu, P. Godignon, X. Perpiñà, X. Jordà, and J. Millán. Microelectron. Reliab., 52 (9-10): 2250-2255 (2012)High voltage low Ron in-situ SiN/Al0.35GaN0.65/GaN-on-Si power HEMTs operation up to 300°C.A. Fontserè, A. Pérez-Tomás, P. Godignon, J. Millán, J. Parsey, and P. Moens. ESSDERC, page 306-309. IEEE, (2012)Coupled electro-thermal simulation of a DC/DC converter.M. Vellvehí, X. Jordà, P. Godignon, C. Ferrer, and J. Millán. Microelectronics Reliability, 47 (12): 2114-2121 (2007)

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Disambiguation of "Godignon, Philippe"

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IGBT gate driver IC with full-bridge output stage using a modified standard CMOS process.

Please choose a person to relate this publication to

Jun. -Prof. Dr. Philippe Grönquist University of Stuttgart

Other publications of authors with the same name

Disambiguation

PUMA

Disambiguation of "Godignon, Philippe"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML IGBT gate driver IC with full-bridge output stage using a modified standard CMOS process.

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Jun. -Prof. Dr. Philippe Grönquist University of Stuttgart

Other publications of authors with the same name

Disambiguation

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IGBT gate driver IC with full-bridge output stage using a modified standard CMOS process.