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Electro-thermal characterization of a differential temperature sensor in a 65 nm CMOS IC: Applications to gain monitoring in RF amplifiers.

J. Altet, J. González, D. Gómez, X. Perpiñà, W. Claeys, S. Grauby, C. Dufis, M. Vellvehí, D. Mateo, F. Reverter, S. Dilhaire, and X. Jordà. Microelectronics Journal, 45 (5): 484-490 (2014)

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Investigations on electro-optical and thermal performances degradation of high power density GaAs-based laser diode in vacuum environment.J. Michaud, G. Pedroza, L. Béchou, L. How, O. Gilard, D. Veyrié, F. Laruelle, and S. Grauby. Microelectronics Reliability, 55 (9-10): 1746-1749 (2015)Strain energy imaging of a power MOS transistor using speckle interferometry.S. Dilhaire, S. Grauby, S. Jorez, and W. Claeys. IEEE Trans. Reliability, 53 (2): 293-296 (2004)Applications of temperature phase measurements to IC testing.J. Altet, J. Rampnoux, J. Batsale, S. Dilhaire, A. Rubio, W. Claeys, and S. Grauby. Microelectronics Reliability, 44 (1): 95-103 (2004)Thermal parameters identification of micrometric layers of microelectronic devices by thermoreflectance microscopy.S. Dilhaire, S. Grauby, W. Claeys, and J. Batsale. Microelectronics Journal, 35 (10): 811-816 (2004)Joule expansion imaging techniques on microlectronic devices.S. Grauby, L. Lopez, M. Salhi, E. Puyoo, J. Rampnoux, W. Claeys, and S. Dilhaire. Microelectronics Journal, 40 (9): 1367-1372 (2009)Laser Seebeck Effect Imaging (SEI) and Peltier Effect Imaging (PEI): complementary investigation methods.S. Dilhaire, M. Salhi, S. Grauby, and W. Claeys. Microelectronics Reliability, 43 (9-11): 1609-1613 (2003)Time gating imaging through thick silicon substrate: a new step towards backside characterisation.J. Rampnoux, H. Michel, M. Salhi, S. Grauby, W. Claeys, and S. Dilhaire. Microelectronics Reliability, 46 (9-11): 1520-1524 (2006)Application of Picosecond Ultrasonics to Non-Destructive Analysis in VLSI circuits.G. Andriamonje, V. Pouget, Y. Ousten, D. Lewis, Y. Danto, J. Rampnoux, Y. Ezzahri, S. Dilhaire, S. Grauby, and W. Claeys. Microelectronics Reliability, 43 (9-11): 1803-1807 (2003)ElectroStatic Discharge Fault Localization by Laser Probing.S. Grauby, M. Salhi, W. Claeys, D. Trias, and S. Dilhaire. Microelectronics Reliability, 45 (9-11): 1482-1486 (2005)Electro-thermal characterization of a differential temperature sensor in a 65 nm CMOS IC: Applications to gain monitoring in RF amplifiers.J. Altet, J. González, D. Gómez, X. Perpiñà, W. Claeys, S. Grauby, C. Dufis, M. Vellvehí, D. Mateo, F. Reverter and 2 other author(s). Microelectronics Journal, 45 (5): 484-490 (2014)

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Electro-thermal characterization of a differential temperature sensor in a 65 nm CMOS IC: Applications to gain monitoring in RF amplifiers.

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copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Electro-thermal characterization of a differential temperature sensor in a 65 nm CMOS IC: Applications to gain monitoring in RF amplifiers.

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Electro-thermal characterization of a differential temperature sensor in a 65 nm CMOS IC: Applications to gain monitoring in RF amplifiers.