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Influence of the manufacturing process on the electrical properties of thin (k stacks observed with CAFM.

, , , , , , , and . Microelectronics Reliability, 47 (9-11): 1424-1428 (2007)

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Influence of the manufacturing process on the electrical properties of thin (k stacks observed with CAFM., , , , , , , and . Microelectronics Reliability, 47 (9-11): 1424-1428 (2007)Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors., , , , , , and . Microelectronics Reliability, 53 (6): 867-871 (2013)Trapped charge and stress induced leakage current (SILC) in tunnel SiO2 layers of de-processed MOS non-volatile memory devices observed at the nanoscale., , , , , and . Microelectronics Reliability, 49 (9-11): 1188-1191 (2009)Enhanced reliability of hexagonal boron nitride dielectric stacks due to high thermal conductivity., , , , , , and . IRPS, page 6-1. IEEE, (2018)Tristate Resistive Switching in Heterogenous Van Der Waals Dielectric Structures., , , , , , , , , and . IRPS, page 1-6. IEEE, (2019)Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO2/Pt structures., , , , , , , , , and 1 other author(s). Microelectron. Reliab., 52 (9-10): 2110-2114 (2012)UHV CAFM characterization of high-k dielectrics: Effect of the technique resolution on the pre- and post-breakdown electrical measurements., , , , , and . Microelectronics Reliability, 50 (9-11): 1312-1315 (2010)