Author of the publication

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors.

A. Bayerl, M. Lanza, L. Aguilera, M. Porti, M. Nafría, X. Aymerich, and S. Gendt. Microelectronics Reliability, 53 (6): 867-871 (2013)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Stefan de Souza University of Stuttgart

Jörg Desel

Das ist InformatikJ. Desel (Eds.) Springer, (2001)

Das ist InformatikJ. Desel (Eds.) Springer, (2001)Hilfreiche Hilfe Methode, Implementierung und Evaluation eines Verfahrens zur Adaption an das prozedurale WissenD. Iglezakis. Kath. Universität Eichstätt-Ingolstadt, Aachen, (2007)Hilfreiche Hilfe Methode, Implementierung und Evaluation eines Verfahrens zur Adaption an das prozedurale WissenD. Iglezakis. Kath. Universität Eichstätt-Ingolstadt, Aachen, (2007)

Dr. -Ing. Christian Dehlinger University of Stuttgart

Dr. phil. Folkert Degenring University of Stuttgart

Falk Dettinger University of Stuttgart

Other publications of authors with the same name

Mechanism of O2-anneal induced Vfb shifts of Ru gated stacks.Z. Li, T. Schram, L. Pantisano, A. Stesmans, T. Conard, S. Shamuilia, V. Afanasiev, A. Akheyar, S. Elshocht, D. Brunco and 5 other author(s). Microelectronics Reliability, 47 (4-5): 518-520 (2007)In situ crystallisation in ZrO2 thin films during high temperature X-ray diffraction.C. Zhao, G. Roebben, H. Bender, E. Young, S. Haukka, M. Houssa, M. Naili, S. Gendt, M. Heyns, and O. der Biest. Microelectronics Reliability, 41 (7): 995-998 (2001)Negative bias temperature instabilities in HfSiO(N)-based MOSFETs: Electrical characterization and modeling.M. Houssa, M. Aoulaiche, S. Gendt, G. Groeseneken, and M. Heyns. Microelectronics Reliability, 47 (6): 880-889 (2007)Cost-effective cleaning and high-quality thin gate oxides.M. Heyns, T. Bearda, I. Cornelissen, S. Gendt, R. Degraeve, G. Groeseneken, C. Kenens, D. Knotter, L. Loewenstein, P. Mertens and 8 other author(s). IBM Journal of Research and Development, 43 (3): 339-350 (1999)Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors.A. Bayerl, M. Lanza, L. Aguilera, M. Porti, M. Nafría, X. Aymerich, and S. Gendt. Microelectronics Reliability, 53 (6): 867-871 (2013)Energy distribution of positive charges in high-k dielectric.S. Hatta, Z. Ji, J. Zhang, W. Zhang, N. Soin, B. Kaczer, S. Gendt, and G. Groeseneken. Microelectronics Reliability, 54 (9-10): 2329-2333 (2014)Observation and characterization of defects in HfO2 high-K gate dielectric layers.V. Kaushik, M. Claes, A. Delabie, S. Elshocht, O. Richard, T. Conard, E. Rohr, T. Witters, M. Caymax, and S. Gendt. Microelectronics Reliability, 45 (5-6): 798-801 (2005)Modelling mobility degradation due to remote Coulomb scattering from dielectric charges and its impact on MOS device performance.G. Lujan, W. Magnus, L. Ragnarsson, S. Kubicek, S. Gendt, M. Heyns, and K. Meyer. Microelectronics Reliability, 45 (5-6): 794-797 (2005)Devices and Circuits Using Novel 2-D Materials: A Perspective for Future VLSI Systems.G. Resta, A. Leonhardt, Y. Balaji, S. Gendt, P. Gaillardon, and G. Micheli. IEEE Trans. VLSI Syst., 27 (7): 1486-1503 (2019)

PUMA

Disambiguation of "Gendt, Stefan De"

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors.

Please choose a person to relate this publication to

Stefan de Souza University of Stuttgart

Jörg Desel

Dr. -Ing. Christian Dehlinger University of Stuttgart

Dr. phil. Folkert Degenring University of Stuttgart

Falk Dettinger University of Stuttgart

Other publications of authors with the same name

Disambiguation

PUMA

Disambiguation of "Gendt, Stefan De"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors.

Please choose a person to relate this publication to

Stefan de Souza University of Stuttgart

Jörg Desel

Dr. -Ing. Christian Dehlinger University of Stuttgart

Dr. phil. Folkert Degenring University of Stuttgart

Falk Dettinger University of Stuttgart

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors.