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Process, Circuit and System Co-optimization of Wafer Level Co-Integrated FinFET with Vertical Nanosheet Selector for STT-MRAM Applications.

T. Bao, A. Veloso, S. Sakhare, P. Matagne, J. Ryckaert, M. Perumkunnil, D. Crotti, F. Yasin, A. Spessot, A. Furnemont, G. Kar, and A. Mocuta. DAC, page 13. ACM, (2019)

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Extended RVS characterisation of STT-MRAM devices: Enabling detection of AP/P switching and breakdown.B. O'Sullivan, S. Beek, P. Roussel, S. Rao, W. Kim, S. Couet, J. Swerts, F. Yasin, D. Crotti, D. Linten and 1 other author(s). IRPS, page 5-1. IEEE, (2018)Pinhole Defect Characterization and Fault Modeling for STT-MRAM Testing.L. Wu, S. Rao, G. Medeiros, M. Taouil, E. Marinissen, F. Yasin, S. Couet, S. Hamdioui, and G. Kar. ETS, page 1-6. IEEE, (2019)Process, Circuit and System Co-optimization of Wafer Level Co-Integrated FinFET with Vertical Nanosheet Selector for STT-MRAM Applications.T. Bao, A. Veloso, S. Sakhare, P. Matagne, J. Ryckaert, M. Perumkunnil, D. Crotti, F. Yasin, A. Spessot, A. Furnemont and 2 other author(s). DAC, page 13. ACM, (2019)SOT-MRAM 300mm integration for low power and ultrafast embedded memories.K. Garello, F. Yasin, S. Couet, L. Souriau, J. Swerts, S. Rao, S. Beek, W. Kim, E. Liu, S. Kundu and 9 other author(s). CoRR, (2018)

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Process, Circuit and System Co-optimization of Wafer Level Co-Integrated FinFET with Vertical Nanosheet Selector for STT-MRAM Applications.

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copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Process, Circuit and System Co-optimization of Wafer Level Co-Integrated FinFET with Vertical Nanosheet Selector for STT-MRAM Applications.

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Process, Circuit and System Co-optimization of Wafer Level Co-Integrated FinFET with Vertical Nanosheet Selector for STT-MRAM Applications.