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Logic-in-Memory With a Nonvolatile Programmable Metallization Cell.

, , and . IEEE Trans. VLSI Syst., 24 (2): 521-529 (2016)

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A memristor-based memory cell using ambipolar operation., and . ICCD, page 148-153. IEEE Computer Society, (2011)A memristor-based TCAM (ternary content addressable memory) cell: design and evaluation., and . ACM Great Lakes Symposium on VLSI, page 311-314. ACM, (2012)Time/Temperature Degradation of Solar Cells under the Single Diode Model., and . DFT, page 240-248. IEEE Computer Society, (2010)A Ternary Content Addressable Cell Using a Single Phase Change Memory (PCM)., , and . ACM Great Lakes Symposium on VLSI, page 259-264. ACM, (2015)CCE: A Combined SRAM and Non Volatile Cache for Endurance of Next Generation Multilevel Non Volatile Memories in Embedded Systems., , , and . NANOARCH, page 58-64. ACM, (2018)Circuits for a Perpendicular Magnetic Anisotropic (PMA) Racetrack Memory., , and . IEEE Trans. Multi-Scale Computing Systems, 1 (3): 127-137 (2015)Macromodeling a phase change memory (PCM) cell by HSPICE., , and . NANOARCH, page 77-84. ACM, (2012)Design of a Low-Power Non-Volatile Programmable Inverter Cell for COGRE-based Circuits., , , and . ACM Great Lakes Symposium on VLSI, page 11-16. ACM, (2017)A hybrid non-volatile SRAM cell with concurrent SEU detection and correction., , and . DATE, page 1-4. European Design and Automation Association, (2014)Logic-in-Memory With a Nonvolatile Programmable Metallization Cell., , and . IEEE Trans. VLSI Syst., 24 (2): 521-529 (2016)