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Disambiguation of "Takeuchi, Ken"

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Near Threshold Voltage Word-Line Voltage Injection Self-Convergence Scheme for Local Electron Injected Asymmetric Pass Gate Transistor 6T-SRAM.

, , , and . IEEE Trans. on Circuits and Systems, 59-I (8): 1635-1643 (2012)

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PD Dr. Martin Kenner University of Stuttgart

Finn Kenklies University of Stuttgart

 

Other publications of authors with the same name

LBA Scrambler: A NAND Flash Aware Data Management Scheme for High-Performance Solid-State Drives., , , , and . IEEE Trans. VLSI Syst., 24 (1): 115-128 (2016)Near Threshold Voltage Word-Line Voltage Injection Self-Convergence Scheme for Local Electron Injected Asymmetric Pass Gate Transistor 6T-SRAM., , , and . IEEE Trans. on Circuits and Systems, 59-I (8): 1635-1643 (2012)A 6T-SRAM With a Post-Process Electron Injection Scheme That Pinpoints and Simultaneously Repairs Disturb Fails for 57% Less Read Delay and 31% Less Read Energy., , , and . J. Solid-State Circuits, 48 (9): 2239-2249 (2013)Over 10-times high-speed, energy efficient 3D TSV-integrated hybrid ReRAM/MLC NAND SSD by intelligent data fragmentation suppression., , , , , and . ASP-DAC, page 81-82. IEEE, (2013)Highly reliable solid-state drives (SSDs) with error-prediction LDPC (EP-LDPC) architecture and error-recovery scheme., , and . ASP-DAC, page 83-84. IEEE, (2013)Design Considerations for an Information Query Computer., , , , , and . Advanced Database Machine Architecture, page 130-167. Prentice-Hall, (1983)Variation of SCM/NAND Flash Hybrid SSD Performance, Reliability and Cost by Using Different SSD Configurations and Error Correction Strengths., , , and . IEICE Transactions, 99-C (4): 444-451 (2016)Reliability Analysis of Scaled NAND Flash Memory Based SSDs with Real Workload Characteristics by Using Real Usage-Based Precise Reliability Test., , , and . IEICE Transactions, 101-C (4): 243-252 (2018)An Inductively Powered Wireless Solid-State Drive System With Merged Error Correction of High-Speed Wireless Data Links and NAND Flash Memories., , , , , , , and . J. Solid-State Circuits, 51 (4): 1041-1050 (2016)0.6 V operation, 26% smaller voltage ripple, 9% energy efficient boost converter with adaptively optimized comparator bias-current for ReRAM program in low power IoT embedded applications., , , , and . A-SSCC, page 1-4. IEEE, (2015)