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Laterally coupled InGaN/GaN DFB laser diodes, , , , , , , , and . Wiley Online Library, (2002)Direct-to-indirect energy gap transition in strained Ga x In 1-x As/InP quantum wells, , , , , and . (1993)Optical gain and saturation in nitride-based laser structures, , , , , , , , , and 1 other author(s). (2001)Direct experimental evidence of indirect bandgap transitions in strained GaInAs(P)/InP quantum well structures, , , , , , , and . (1994)Influence of exciton ionization on recombination dynamics in In 0.53 Ga 0.47 As/InP quantum wells, , , , and . (1993)Gain saturation in (In,Ga)N/GaN/( Al , Ga )N laser structures, , , , , , , and . (2000)Interface characteristics of GaInP/GaAs double heterostructuers grown by metalorganic vapor phase epitaxy, , , , , , , and . (1994)Nonradiative and radiative recombination of electrons and holes in quantum wells, , , , , , , , and . (1994)Indirect excitons in strained Ga x In 1-x As/InP quantum wells, , , , , and . (1993)Photoluminescence studies on GaInAs/InP Quantum Wells, , , , , , , and . CRC Press Inc, (1997)