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Direct-to-indirect energy gap transition in strained Ga x In 1-x As/InP quantum wells, , , , , and . (1993)Optical gain, gain saturation, and waveguiding in group III-nitride heterostructures, , , , , and . phys. stat. sol. (c) 0 1860-1877, (2003)Influence of barrier height on carrier lifetime in Ga 1-y In y P/(Al x Ga 1-x ) 1-y In y P single quantum wells, , , , and . (1992)MOVPE growth of (Al)GaAs on GaAs and Si for photovoltaic applications, , , , , , , and . (1992)Three-dimensional GaN for semipolar light emitters, , , , , , , , , and 11 other author(s). (2011)Photoluminescence studies on GaInAs/InP Quantum Wells, , , , , , , and . CRC Press Inc, (1997)Influence of exciton ionization on recombination dynamics in In 0.53 Ga 0.47 As/InP quantum wells, , , , and . (1993)Identification of a nonradiative recombination center in GaAs, , , and . (1992)Interface characteristics of GaInP/GaAs double heterostructuers grown by metalorganic vapor phase epitaxy, , , , , , , and . (1994)Nonradiative and radiative recombination of electrons and holes in quantum wells, , , , , , , , and . (1994)