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Quaternary AlxInyGa1−x−yN layers deposited by pulsed metal-organic vapor-phase epitaxy for high efficiency light emission, , , , , and . Journal of Crystal Growth, 315 (1): 254 - 257 (2011)15th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XV).Green Photoluminescence of Single InPQuantum Dots grown on Al0.66Ga0.33InP/AlInP Distributed Bragg Reflectors, , , and . (2007)Strong mode coupling in InP quantum dot-based GaInP microdisk cavity dimers, , , , , , , , , and . New Journal of Physics, 15 (1): 013060 (2013)Postselected indistinguishable single-photon emission from the Mollow triplet sidebands of a resonantly excited quantum dot, , , , and . Phys. Rev. B, 87 (24): 241302 (June 2013)Enhanced Efficiency of GaInP Disk Laser by In-Well Pumping, , , , , , , and . Optics Express, (2015)Optical Studies of GaInP/GaP Quantum Dots, , , , , , and . (2003)Bandgap measurements of direct and indirect semiconductors using monochromated electrons, , , , , , , , , and . (2007)160°C pulsed laser operation of AlGaInP-based vertical-cavity surface-emitting lasers, , , , , , and . (2003)Quaternary Al<sub>x</sub>In<sub>y</sub>Ga<sub>1-x-y</sub>N layers deposited by pulsed metal-organic vapor-phase epitaxy for high efficiency light emission, , , , , and . (2010)Time-resolved photoluminescence of semipolar GaInN/GaN multiquantum well structures, , , , , , , , and . (2007)