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A 58nm 1.8V 1Gb PRAM with 6.4MB/s program BW.

H. Chung, B. Jeong, B. Min, Y. Choi, B. Cho, J. Shin, J. Kim, J. Sunwoo, J. min Park, Q. Wang, Y. jun Lee, S. Cha, D. Kwon, S. Kim, S. Kim, Y. Rho, M. Park, J. Kim, I. Song, S. Jun, J. Lee, K. Kim, K. won Lim, W. ryul Chung, C. Choi, H. Cho, I. Shin, W. Jun, S. Hwang, K. Song, K. Lee, S. whan Chang, W. Cho, J. Yoo, and Y. Jun. ISSCC, page 500-502. IEEE, (2011)

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A 20nm 1.8V 8Gb PRAM with 40MB/s program bandwidth.Y. Choi, I. Song, M. Park, H. Chung, S. Chang, B. Cho, J. Kim, Y. Oh, D. Kwon, J. Sunwoo and 20 other author(s). ISSCC, page 46-48. IEEE, (2012)A 512Gb 3-bit/Cell 3D 6th-Generation V-NAND Flash Memory with 82MB/s Write Throughput and 1.2Gb/s Interface.D. Kang, M. Kim, S. Jeon, W. Jung, J. Park, G. Choo, D. Shim, A. Kavala, S. Kim, K. Kang and 39 other author(s). ISSCC, page 216-218. IEEE, (2019)BER Measurement of a 5.8-Gb/s/pin Unidirectional Differential I/O for DRAM Application With DIMM Channel.Y. Jang, H. Chung, Y. Choi, H. Park, J. Kim, S. Lim, J. Sunwoo, M. Park, H. Kim, S. Kim and 5 other author(s). IEEE J. Solid State Circuits, 44 (11): 2987-2998 (2009)Reproducible Hydrological Modeling with CyberGIS-Jupyter: A Case Study on SUMMA.F. Lyu, D. Yin, A. Padmanabhan, Y. Choi, J. Goodall, A. Castronova, D. Tarboton, and S. Wang. PEARC, page 21:1-21:6. ACM, (2019)11.4 A 512Gb 3b/cell 64-stacked WL 3D V-NAND flash memory.C. Kim, J. Cho, W. Jeong, I. Park, H. Park, D. Kim, D. Kang, S. Lee, J. Lee, W. Kim and 34 other author(s). ISSCC, page 202-203. IEEE, (2017)Temperature-Tracking Sensing Scheme With Adaptive Precharge and Noise Compensation Scheme in PRAM.J. Ko, J. Kim, Y. Choi, H. Park, and S. Jung. IEEE Trans. on Circuits and Systems, 62-I (8): 2091-2102 (2015)A 512-Gb 3-b/Cell 64-Stacked WL 3-D-NAND Flash Memory.C. Kim, D. Kim, W. Jeong, H. Kim, I. Park, H. Park, J. Lee, J. Park, Y. Ahn, J. Lee and 20 other author(s). J. Solid-State Circuits, 53 (1): 124-133 (2018)A 58nm 1.8V 1Gb PRAM with 6.4MB/s program BW.H. Chung, B. Jeong, B. Min, Y. Choi, B. Cho, J. Shin, J. Kim, J. Sunwoo, J. min Park, Q. Wang and 25 other author(s). ISSCC, page 500-502. IEEE, (2011)

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A 58nm 1.8V 1Gb PRAM with 6.4MB/s program BW.

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copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML A 58nm 1.8V 1Gb PRAM with 6.4MB/s program BW.

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Disambiguation

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A 58nm 1.8V 1Gb PRAM with 6.4MB/s program BW.