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s Interface.

D. Kang, M. Kim, S. Jeon, W. Jung, J. Park, G. Choo, D. Shim, A. Kavala, S. Kim, K. Kang, J. Lee, K. Ko, H. Park, B. Min, C. Yu, S. Yun, N. Kim, Y. Jung, S. Seo, S. Kim, M. Lee, J. Park, J. Kim, Y. Cha, K. Kim, Y. Jo, H. Kim, Y. Choi, J. Byun, J. hyun Park, K. Kim, T. Kwon, Y. Min, C. Yoon, Y. Kim, D. Kwak, E. Lee, W. Hahn, K. Kim, K. Kim, E. Yoon, W. Kim, I. Lee, S. Moon, J. Ihm, D. Byeon, K. Song, S. Hwang, and K. Kyung. ISSCC, page 216-218. IEEE, (2019)

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M.Sc Yeonse Kang University of Stuttgart

Michael Minas University of Stuttgart

Kai Mindermann University of Stuttgart

Ralf Minke University of Stuttgart

Dr. -Ing. Min Huang University of Stuttgart

Other publications of authors with the same name

A 64Gb 533Mb/s DDR interface MLC NAND Flash in sub-20nm technology.D. Lee, I. Chang, S. Yoon, J. Jang, D. Jang, W. Hahn, J. Park, D. Kim, C. Yoon, B. Lim and 27 other author(s). ISSCC, page 430-432. IEEE, (2012)Security experts' capability design for future internet of things platform.M. Kang, O. Na, and H. Chang. The Journal of Supercomputing, 72 (1): 103-119 (2016)7.1 256Gb 3b/cell V-NAND flash memory with 48 stacked WL layers.D. Kang, W. Jeong, C. Kim, D. Kim, Y. Cho, K. Kang, J. Ryu, K. Kang, S. Lee, W. Kim and 20 other author(s). ISSCC, page 130-131. IEEE, (2016)256 Gb 3 b/Cell V-nand Flash Memory With 48 Stacked WL Layers.D. Kang, W. Jeong, C. Kim, D. Kim, Y. Cho, K. Kang, J. Ryu, K. Kang, S. Lee, W. Kim and 19 other author(s). J. Solid-State Circuits, 52 (1): 210-217 (2017)A 512Gb 3-bit/Cell 3D 6th-Generation V-NAND Flash Memory with 82MB/s Write Throughput and 1.2Gb/s Interface.D. Kang, M. Kim, S. Jeon, W. Jung, J. Park, G. Choo, D. Shim, A. Kavala, S. Kim, K. Kang and 39 other author(s). ISSCC, page 216-218. IEEE, (2019)Elements of Properties of User Experience in Cloud Computing Documentation Platform According to Smart Device Screen Size Changes: Focus on Google Docs and Naver Office.M. Kang, and S. Kim. HCI (19), volume 9187 of Lecture Notes in Computer Science, page 551-562. Springer, (2015)Three-Dimensional 128 Gb MLC Vertical nand Flash Memory With 24-WL Stacked Layers and 50 MB/s High-Speed Programming.K. Park, S. Nam, D. Kim, P. Kwak, D. Lee, Y. Choi, M. Choi, D. Kwak, D. Kim, M. Kim and 20 other author(s). J. Solid-State Circuits, 50 (1): 204-213 (2015)A quantitative assessment of LCOs for operations using system dynamics.K. Kang, and M. Jae. Rel. Eng. & Sys. Safety, 87 (2): 211-222 (2005)Space Vector Pulse-Width Modulation Control Strategy for Four-Leg Inverters Under Single Line-to-Ground Faults in Islanded Microgrids.C. An, B. Choi, H. Lee, T. Kim, K. Kang, M. Kim, Y. Lee, J. Yi, and C. Won. IEEE Access, (2022)

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Disambiguation of "Kang, Kyung-Min"

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A 512Gb 3-bit/Cell 3D 6th-Generation V-NAND Flash Memory with 82MB/s Write Throughput and 1.2Gb/s Interface.

Please choose a person to relate this publication to

M.Sc Yeonse Kang University of Stuttgart

Michael Minas University of Stuttgart

Kai Mindermann University of Stuttgart

Ralf Minke University of Stuttgart

Dr. -Ing. Min Huang University of Stuttgart

Other publications of authors with the same name

Disambiguation

PUMA

Disambiguation of "Kang, Kyung-Min"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML A 512Gb 3-bit/Cell 3D 6th-Generation V-NAND Flash Memory with 82MB/s Write Throughput and 1.2Gb/s Interface.

Please choose a person to relate this publication to

M.Sc Yeonse Kang University of Stuttgart

Michael Minas University of Stuttgart

Kai Mindermann University of Stuttgart

Ralf Minke University of Stuttgart

Dr. -Ing. Min Huang University of Stuttgart

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

A 512Gb 3-bit/Cell 3D 6th-Generation V-NAND Flash Memory with 82MB/s Write Throughput and 1.2Gb/s Interface.