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A 200-225 GHz SiGe Power Amplifier with peak Psat of 9.6 dBm using wideband power combination.

, , , and . ESSCIRC, page 193-196. IEEE, (2016)

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A 288-GHz Lens-Integrated Balanced Triple-Push Source in a 65-nm CMOS Technology., , and . J. Solid-State Circuits, 48 (7): 1751-1761 (2013)A 20 dBm Fully-Integrated 60 GHz SiGe Power Amplifier With Automatic Level Control., and . J. Solid-State Circuits, 42 (7): 1455-1463 (2007)Towards THz high data-rate communication: a 50 Gbps all-electronic wireless link at 240 GHz., , , , and . NANOCOM, page 25:1-25:2. ACM, (2017)A SiGe quadrature transmitter and receiver chipset for emerging high-frequency applications at 160GHz., , and . ISSCC, page 416-417. IEEE, (2010)A Terahertz Detector Array in a SiGe HBT Technology., , , and . J. Solid-State Circuits, 48 (9): 2002-2010 (2013)25.1 A fully integrated 0.55THz near-field sensor with a lateral resolution down to 8µm in 0.13µm SiGe BiCMOS., , and . ISSCC, page 424-425. IEEE, (2016)A 200-225 GHz SiGe Power Amplifier with peak Psat of 9.6 dBm using wideband power combination., , , and . ESSCIRC, page 193-196. IEEE, (2016)Design and Compliance Testing of a SiGe WCDMA Receiver IC With Integrated Analog Baseband., , , , and . Proceedings of the IEEE, 93 (9): 1624-1636 (2005)A 1kpixel CMOS camera chip for 25fps real-time terahertz imaging applications., , , , , , and . ISSCC, page 252-254. IEEE, (2012)A 128-pixel 0.56THz sensing array for real-time near-field imaging in 0.13μm SiGe BiCMOS., , , , , , , , and . ISSCC, page 418-420. IEEE, (2018)