Author of the publication

A 200-225 GHz SiGe Power Amplifier with peak Psat of 9.6 dBm using wideband power combination.

, , , and . ESSCIRC, page 193-196. IEEE, (2016)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

 

Other publications of authors with the same name

A 79GHz SiGe-Bipolar Spread-Spectrum TX for Automotive Radar., , , , , , , and . ISSCC, page 430-613. IEEE, (2007)SiGe Bipolar VCO With Ultra-Wide Tuning Range at 80 GHz Center Frequency., , , , and . J. Solid-State Circuits, 44 (10): 2655-2662 (2009)A 32-48 GHz Differential YIG Oscillator With Low Phase Noise Based On a SiGe MMIC., , , and . RWS, page 1-3. IEEE, (2019)A Low-Power Wideband Transmitter Front-End Chip for 80 GHz FMCW Radar Systems With Integrated 23 GHz Downconverter VCO., , , and . J. Solid-State Circuits, 47 (9): 1974-1980 (2012)An 84 GHz Bandwidth and 20 dB Gain Broadband Amplifier in SiGe Bipolar Technology., , , , , , , and . J. Solid-State Circuits, 42 (10): 2099-2106 (2007)Reliability of high-speed SiGe: C HBT under electrical stress close to the SOA limit., , , , , , , and . Microelectronics Reliability, 55 (9-10): 1433-1437 (2015)A 200-225 GHz SiGe Power Amplifier with peak Psat of 9.6 dBm using wideband power combination., , , and . ESSCIRC, page 193-196. IEEE, (2016)Random telegraph noise in SiGe HBTs: Reliability analysis close to SOA limit., , , , , , and . Microelectronics Reliability, (2017)SiGe BiCMOS technology and circuits for active safety systems., , , , , and . VLSI-DAT, page 1-4. IEEE, (2014)A 61-GHz SiGe Transceiver Frontend for Energy and Data Transmission of Passive RFID Single-Chip Tags With Integrated Antennas., , , , , , and . J. Solid-State Circuits, 53 (9): 2441-2453 (2018)