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25.1 A fully integrated 0.55THz near-field sensor with a lateral resolution down to 8µm in 0.13µm SiGe BiCMOS.

, , and . ISSCC, page 424-425. IEEE, (2016)

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Recombination current measurements in the space charge region of MOS field-induced pn junctions., and . Microelectronics Reliability, 41 (6): 789-795 (2001)A Subharmonic Receiver in SiGe Technology for 122 ~ GHz Sensor Applications., , , , , and . J. Solid-State Circuits, 45 (9): 1644-1656 (2010)A Terahertz Detector Array in a SiGe HBT Technology., , , and . J. Solid-State Circuits, 48 (9): 2002-2010 (2013)25.1 A fully integrated 0.55THz near-field sensor with a lateral resolution down to 8µm in 0.13µm SiGe BiCMOS., , and . ISSCC, page 424-425. IEEE, (2016)Subclasses of Self-Modifying Nets.. Selected Papers from the First and the Second European Workshop on Application and Theory of Petri Nets, volume 52 of Informatik-Fachberichte, page 187-192. Springer, (1981)A 0.53 THz Reconfigurable Source Module With Up to 1 mW Radiated Power for Diffuse Illumination in Terahertz Imaging Applications., , , , , , , and . J. Solid-State Circuits, 49 (12): 2938-2950 (2014)A 0.13 µm SiGe BiCMOS Technology Featuring fT/fmax of 240/330 GHz and Gate Delays Below 3 ps., , , , , , , , , and 12 other author(s). J. Solid-State Circuits, 45 (9): 1678-1686 (2010)Optimization and Performance Limits of a 64-QAM Wireless Communication Link at 220-260 GHz in a SiGe HBT Technology., , , and . RWS, page 1-3. IEEE, (2019)Comments on I. Futo, T. Gergely.. International Working Conference on Model Realism, page 47-48. (1982)A 128-pixel 0.56THz sensing array for real-time near-field imaging in 0.13μm SiGe BiCMOS., , , , , , , , and . ISSCC, page 418-420. IEEE, (2018)