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Analysis of EL Emitted by LEDs on Si Substrates Containing GeSn/Ge Multi Quantum Wells as Active Layers

, , , , , , , and . Gettering and Defect Engineering in Semiconductor Technology XVI, 242, page 361-367. Pfaffikon, Trans Tech Publications, (2016)
DOI: 10.4028/www.scientific.net/SSP.242.361

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