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A Novel Approach for the Modeling of the Dynamic ON-State Resistance of GaN-HEMTs

M. Weiser, J. Hückelheim, and I. Kallfass. IEEE Transactions on Electron Devices, 68 (9): 4302-4309 (September 2021)
DOI: 10.1109/TED.2021.3098498

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Mathias Weiser University of Stuttgart

Univ. -Prof. Dr. Mathias Liewald University of Stuttgart

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C. Honold

J. K\"astner

Other publications of authors with the same name

Fabrication of GePb-Alloys by Means of Pulsed Laser Induced EpitaxyM. Weiser, D. Schwarz, H. Funk, D. Weißhaupt, C. Serra, J. Schulze, and S. Chiussi. 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), page 1-6. IEEE, (2019)A Novel Approach for the Modeling of the Dynamic ON-State Resistance of GaN-HEMTsM. Weiser, J. Hückelheim, and I. Kallfass. IEEE Transactions on Electron Devices, 68 (9): 4302-4309 (September 2021)Gate-Source-Dependent Soft- and Hard-Switching Losses of 1200V SiC MOSFETs Utilizing Heatsinkless Calorimetric Measurements Based on Optical SensorsR. Schnitzler, D. Koch, M. Weiser, J. Weimer, and I. Kallfass. 2024 IEEE Applied Power Electronics Conference and Exposition (APEC), page 1100-1107. (February 2024)A Novel Approach for the Modeling of the Dynamic ON-State Resistance of GaN-HEMTsM. Weiser, J. Hückelheim, and I. Kallfass. IEEE transactions on electron devices, 68 (9): 4302-4309 (2021)