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A Novel Approach for the Modeling of the Dynamic ON-State Resistance of GaN-HEMTs

, , and . IEEE transactions on electron devices, 68 (9): 4302-4309 (2021)
DOI: 10.1109/TED.2021.3098498

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Fabrication of GePb-Alloys by Means of Pulsed Laser Induced Epitaxy, , , , , , and . 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), page 1-6. IEEE, (2019)A Novel Approach for the Modeling of the Dynamic ON-State Resistance of GaN-HEMTs, , and . IEEE Transactions on Electron Devices, 68 (9): 4302-4309 (September 2021)A Novel Approach for the Modeling of the Dynamic ON-State Resistance of GaN-HEMTs, , and . IEEE transactions on electron devices, 68 (9): 4302-4309 (2021)