%0 Journal Article %1 weiser2021novel %A Weiser, Mathias C. J. %A Hückelheim, Jan %A Kallfass, Ingmar %D 2021 %I IEEE %J IEEE transactions on electron devices %K %N 9 %P 4302-4309 %R 10.1109/TED.2021.3098498 %T A Novel Approach for the Modeling of the Dynamic ON-State Resistance of GaN-HEMTs %V 68

@article{weiser2021novel, added-at = {2023-08-31T16:41:51.000+0200}, affiliation = {Weiser, MCJ (Corresponding Author), Univ Stuttgart, Inst Robust Power Semicond Syst, D-70569 Stuttgart, Germany. Weiser, Mathias C. J.; Hueckelheim, Jan; Kallfass, Ingmar, Univ Stuttgart, Inst Robust Power Semicond Syst, D-70569 Stuttgart, Germany.}, author = {Weiser, Mathias C. J. and Hückelheim, Jan and Kallfass, Ingmar}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2f629c8561a288e47be8f3c3dc8543da4/puma-wartung}, doi = {10.1109/TED.2021.3098498}, interhash = {1fe9f48d6e0455332e7e04736da4f93c}, intrahash = {f629c8561a288e47be8f3c3dc8543da4}, issn = {{0018-9383} and {1557-9646}}, journal = {IEEE transactions on electron devices}, keywords = {}, language = {eng}, number = 9, pages = {4302-4309}, publisher = {IEEE}, research-areas = {Engineering; Physics}, timestamp = {2023-08-31T14:41:51.000+0200}, title = {A Novel Approach for the Modeling of the Dynamic ON-State Resistance of GaN-HEMTs}, unique-id = {WOS:000686761500023}, volume = 68, year = 2021 }