Author of the publication

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

A 65-nm CMOS area optimized de-synchronization flow for sub-VT designs.

C. Muller, S. Malkowsky, O. Andersson, B. Mohammadi, J. Sparsø, and J. Rodrigues. VLSI-SoC, page 380-385. IEEE, (2013)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

No persons found for author name Mohammadi, Babak

add a person with the name Mohammadi, Babak

Other publications of authors with the same name

A 35 fJ/bit-access sub-VT memory using a dual-bit area-optimized standard-cell in 65 nm CMOS.O. Andersson, B. Mohammadi, P. Meinerzhagen, and J. Rodrigues. ESSCIRC, page 243-246. IEEE, (2014)Ultra Low Voltage Synthesizable Memories: A Trade-Off Discussion in 65 nm CMOS.O. Andersson, B. Mohammadi, P. Meinerzhagen, A. Burg, and J. Rodrigues. IEEE Trans. on Circuits and Systems, 63-I (6): 806-817 (2016)Joint replenishment policy with backordering and special sale.A. Taleizadeh, H. Samimi, and B. Mohammadi. Int. J. Systems Science, 46 (7): 1172-1198 (2015)Ultra low energy and area efficient charge pump with automatic clock controller in 65 nm CMOS.B. Mohammadi, and J. Rodrigues. A-SSCC, page 1-4. IEEE, (2015)A stochastic model of tumor angiogenesis.B. Mohammadi, V. Haghpanah, and B. Larijani. Comp. in Bio. and Med., 38 (9): 1007-1011 (2008)A 65 nm single stage 28 fJ/cycle 0.12 to 1.2V level-shifter.B. Mohammadi, and J. Rodrigues. ISCAS, page 990-993. IEEE, (2014)A 65-nm CMOS area optimized de-synchronization flow for sub-VT designs.C. Muller, S. Malkowsky, O. Andersson, B. Mohammadi, J. Sparsø, and J. Rodrigues. VLSI-SoC, page 380-385. IEEE, (2013)A 128 kb single-bitline 8.4 fJ/bit 90MHz at 0.3V 7T sense-amplifierless SRAM in 28 nm FD-SOI.B. Mohammadi, O. Andersson, J. Nguyen, L. Ciampolini, A. Cathelin, and J. Rodrigues. ESSCIRC, page 429-432. IEEE, (2016)PPF-Dependent Fixed Point Results for Multi-Valued ϕ-F-Contractions in Banach Spaces and Applications.M. Jaradat, B. Mohammadi, V. Parvaneh, H. Aydi, and Z. Mustafa. Symmetry, 11 (11): 1375 (2019)A 500 fW/bit 14 fJ/bit-access 4kb standard-cell based sub-VT memory in 65nm CMOS.P. Meinerzhagen, O. Andersson, B. Mohammadi, S. Sherazi, A. Burg, and J. Rodrigues. ESSCIRC, page 321-324. IEEE, (2012)

PUMA

Disambiguation of "Mohammadi, Babak"

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

A 65-nm CMOS area optimized de-synchronization flow for sub-VT designs.

Please choose a person to relate this publication to

Other publications of authors with the same name

Disambiguation

PUMA

Disambiguation of "Mohammadi, Babak"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML A 65-nm CMOS area optimized de-synchronization flow for sub-VT designs.

Please choose a person to relate this publication to

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

A 65-nm CMOS area optimized de-synchronization flow for sub-VT designs.