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A low-voltage 1Mb FeRAM in 0.13μm CMOS featuring time-to-digital sensing for expanded operating margin in scaled CMOS., , , and . ISSCC, page 208-210. IEEE, (2011)A 47pJ/pulse 3.1-to-5GHz All-Digital UWB Transmitter in 90nm CMOS., and . ISSCC, page 118-591. IEEE, (2007)A 110µW 10Mb/s etextiles transceiver for body area networks with remote battery power., and . ISSCC, page 496-497. IEEE, (2010)A 28 nm 0.6 V Low Power DSP for Mobile Applications., , , , , , , , , and 5 other author(s). J. Solid-State Circuits, 47 (1): 35-46 (2012)A 28 nm FDSOI Integrated Reconfigurable Switched-Capacitor Based Step-Up DC-DC Converter With 88% Peak Efficiency., , and . J. Solid-State Circuits, 50 (7): 1540-1549 (2015)A Micro-Power EEG Acquisition SoC With Integrated Feature Extraction Processor for a Chronic Seizure Detection System., , , , , and . J. Solid-State Circuits, 45 (4): 804-816 (2010)Ultrasonic Imaging Transceiver Design for CMUT: A Three-Level 30-Vpp Pulse-Shaping Pulser With Improved Efficiency and a Noise-Optimized Receiver., , , and . J. Solid-State Circuits, 48 (11): 2734-2745 (2013)20 µ A to 100 mA DC-DC Converter With 2.8-4.2 V Battery Supply for Portable Applications in 45 nm CMOS., , and . J. Solid-State Circuits, 46 (12): 2807-2820 (2011)Zero-Crossing Detector Based Reconfigurable Analog System., , and . J. Solid-State Circuits, 46 (11): 2478-2487 (2011)A Low-Voltage 1 Mb FRAM in 0.13 µm CMOS Featuring Time-to-Digital Sensing for Expanded Operating Margin., , , and . J. Solid-State Circuits, 47 (1): 141-150 (2012)