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A 1×2 MIMO Multi-Band CMOS Transceiver with an Integrated Front-End in 90nm CMOS for 802.11a/g/n WLAN Applications., , , , , , , , , and 10 other author(s). ISSCC, page 356-357. IEEE, (2008)A 28.6dBm 65nm Class-E PA with Envelope Restoration by Pulse-Width and Pulse-Position Modulation., , , , , , and . ISSCC, page 566-567. IEEE, (2008)A 2 GHz 244 fs-Resolution 1.2 ps-Peak-INL Edge Interpolator-Based Digital-to-Time Converter in 28 nm CMOS., , , , , , , , and . J. Solid-State Circuits, 51 (12): 2992-3004 (2016)A Class-E PA With Pulse-Width and Pulse-Position Modulation in 65 nm CMOS., , , , , , and . J. Solid-State Circuits, 44 (6): 1668-1678 (2009)A 45 nm CMOS miniature phase shifter with constant amplitude response., , , and . Microelectronics Journal, 42 (10): 1143-1150 (2011)A Class-G Switched-Capacitor RF Power Amplifier., , , , , , and . J. Solid-State Circuits, 48 (5): 1212-1224 (2013)A Cellular Multiband DTC-Based Digital Polar Transmitter With -153 dBc/Hz Noise in 14-nm FinFET., , , , , , , , , and 5 other author(s). ESSCIRC, page 179-182. IEEE, (2019)A 2.4-GHz 20-40-MHz Channel WLAN Digital Outphasing Transmitter Utilizing a Delay-Based Wideband Phase Modulator in 32-nm CMOS., , , , , , , , , and 3 other author(s). J. Solid-State Circuits, 47 (12): 3184-3196 (2012)A 31.5dBm outphasing class-D power amplifier in 45nm CMOS with back-off efficiency enhancement by dynamic power control., , , , , , and . ESSCIRC, page 131-134. IEEE, (2011)2.9 A 2GHz 244fs-resolution 1.2ps-Peak-INL edge-interpolator-based digital-to-time converter in 28nm CMOS., , , , , , , and . ISSCC, page 52-54. IEEE, (2016)