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Ge-on-Si PIN-photodetectors with Al nanoantennas: The effect of nanoantenna size on light scattering into waveguide modes, , , , , , , , , and . Applied Physics Letters, (2016)Approaches for III/V Photonics on Si, , , , , , , , , and . Physics of semiconductors : 30th International Conference on the Physics of Semiconductors . Seoul, Korea, 25 - 30 July 2010, 1399, page 261-262. Melville, New York, AIP, (2010)Electrical Characterization of SiGeSn/Ge/GeSn-pin-Heterodiodes at Low Temperatures., , , , , , , and . MIPRO, page 55-59. IEEE, (2021)FDTD simulation of enhanced Faraday effect in plasmonic composite structures with rectangularly arranged Au particles., , , , , , , , , and . 2018 IEEE International Magnetic Conference (INTERMAG), page 1-2. IEEE, (2018)GeSn-on-Si normal incidence photodetectors with bandwidths more than 40 GHz, , , , , , , , , and 2 other author(s). Optics Express, 22 (1): 839-846 (2014)Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular beam epitaxy, , , , , , and . Applied Physics Letters, 98 (6): 061108 (2011)Ge quantum dot tunneling diode with room temperature negative differential resistance, , , , , and . Applied Physics Letters, 97 (1): 012101 (2010)Luminescence of strained Ge on GeSn virtual substrate grown on Si (001), , , , , and . Silicon Photonics XII, 10108, page 101080D. SPIE, (2017)Local strained silicon platform based on differential SiGe/Si epitaxy, , , , , and . Journal of Crystal Growth, 324 (1): 154-156 (2011)Local growth of graphene on Cu and Cu0.88Ni0.12 foil substrates, , , , and . 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), page 31-36. IEEE, (2017)