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Breakdown fields and conduction mechanisms in thin Ta2O5 layers on Si for high density DRAMs.

, and . Microelectronics Reliability, 42 (2): 157-173 (2002)

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Degradation behavior of Ta2O5 stacks and its dependence on the gate electrode., , and . Microelectronics Reliability, 48 (8-9): 1193-1197 (2008)Thermal Ta2O5--alternative to SiO2 for storage capacitor application., and . Microelectronics Reliability, 42 (8): 1171-1177 (2002)Challenges of Ta2O5 as high-k dielectric for nanoscale DRAMs., and . Microelectronics Reliability, 47 (6): 913-923 (2007)Effect of microwave radiation on the properties of Ta2O5-Si microstructures., , , , , , , and . Microelectronics Reliability, 45 (1): 123-135 (2005)Constant current stress-induced leakage current in mixed HfO2-Ta2O5 stacks., , , and . Microelectronics Reliability, 50 (6): 794-800 (2010)Lightly Al-doped Ta2O5: Electrical properties and mechanisms of conductivity., , and . Microelectronics Reliability, 51 (12): 2102-2109 (2011)Time-dependent-dielectric-breakdown characteristics of Hf-doped Ta2O5/SiO2 stack., , , , and . Microelectronics Reliability, 54 (2): 381-387 (2014)Effects of the metal gate on the stress-induced traps in Ta2O5/SiO2 stacks., , and . Microelectronics Reliability, 48 (4): 514-525 (2008)Electrical properties of thin RF sputtered Ta2O5 films after constant current stress., , and . Microelectronics Reliability, 43 (2): 235-241 (2003)Breakdown fields and conduction mechanisms in thin Ta2O5 layers on Si for high density DRAMs., and . Microelectronics Reliability, 42 (2): 157-173 (2002)