%0 Journal Article %1 journals/mr/AtanassovaP02 %A Atanassova, Elena %A Paskaleva, Albena %D 2002 %J Microelectronics Reliability %K dblp %N 2 %P 157-173 %T Breakdown fields and conduction mechanisms in thin Ta2O5 layers on Si for high density DRAMs. %U http://dblp.uni-trier.de/db/journals/mr/mr42.html#AtanassovaP02 %V 42

@article{journals/mr/AtanassovaP02, added-at = {2015-02-06T00:00:00.000+0100}, author = {Atanassova, Elena and Paskaleva, Albena}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2f1e87905bba3b621b0156b9bf75e06f0/dblp}, ee = {http://dx.doi.org/10.1016/S0026-2714(01)00248-7}, interhash = {0950f66935780b8b3e74d446ccf0c71c}, intrahash = {f1e87905bba3b621b0156b9bf75e06f0}, journal = {Microelectronics Reliability}, keywords = {dblp}, number = 2, pages = {157-173}, timestamp = {2016-02-02T02:01:39.000+0100}, title = {Breakdown fields and conduction mechanisms in thin Ta2O5 layers on Si for high density DRAMs.}, url = {http://dblp.uni-trier.de/db/journals/mr/mr42.html#AtanassovaP02}, volume = 42, year = 2002 }