Soft-Switching Losses in GaN and SiC Power Transistors Based on New Calorimetric Measurements
J. Weimer, und I. Kallfass. 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Seite 455-458. Piscataway, NJ, IEEE, (2019)
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%0 Conference Paper
%1 weimer2019softswitching
%A Weimer, Julian
%A Kallfass, Ingmar
%B 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)
%C Piscataway, NJ
%D 2019
%I IEEE
%K
%P 455-458
%T Soft-Switching Losses in GaN and SiC Power Transistors Based on New Calorimetric Measurements
%@ 978-1-7281-0581-9 and 978-1-72810-580-2 and 978-1-72810-579-6
@inproceedings{weimer2019softswitching,
added-at = {2023-08-31T14:57:04.000+0200},
address = {Piscataway, NJ},
affiliation = {Weimer, J (Reprint Author), Univ Stuttgart, Inst Robust Power Semicond Syst, Stuttgart, Germany.
Weimer, Julian; Kallfass, Ingmar, Univ Stuttgart, Inst Robust Power Semicond Syst, Stuttgart, Germany.},
author = {Weimer, Julian and Kallfass, Ingmar},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/20266d58eef13a4e12ebeb951f57ccd1d/puma-wartung},
booktitle = {2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)},
eventdate = {2019-05-19/2019-05-23},
eventtitle = {31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, PEOPLES R CHINA, MAY 19-23, 2019},
interhash = {9759e7e3a90f53161e6471490b8beb33},
intrahash = {0266d58eef13a4e12ebeb951f57ccd1d},
isbn = {{978-1-7281-0581-9} and {978-1-72810-580-2} and {978-1-72810-579-6}},
keywords = {},
language = {eng},
pages = {455-458},
publisher = {IEEE},
timestamp = {2023-08-31T12:57:04.000+0200},
title = {Soft-Switching Losses in GaN and SiC Power Transistors Based on New Calorimetric Measurements},
unique-id = {ISI:000484987200112},
venue = {Shanghai, China},
year = 2019
}
