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Tunnel Injection into Group IV Semiconductors and its Application to Light-Emitting Devices

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2018 IEEE Photonics Society Summer Topical Meeting Series (SUM), Seite 29-30. (Juli 2018)
DOI: 10.1109/PHOSST.2018.8456688

Zusammenfassung

We present experimental results on using tunnel injection of electrons in Germanium diodes on Silicon substrates for light emission, the Germanium Zener-Emitter. Through tunneling and applying a controlled bias, electrons can be injected into the direct conduction band valley. We discuss the usage for optoelectronic devices.

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